Power semiconductor device capable of controlling slope of current and voltage during dynamic switching

Abstract

Power semiconductor device capable of controlling slope of current and voltage during dynamic switching disclosed. The power semiconductor device may include a semiconductor substrate and a cell array being consisted of a plurality of transistor cells on an active area, wherein each of the plurality of transistor cells may include an emitter region, a body region, a contact region and a gate region, wherein non-uniform threshold voltages may be respectively set in the plurality of transistor cells constituting the cell array, wherein a gate signal may be applied to each of the plurality of transistor cells through an input/output unit, wherein the input/output unit may include a first gate signal path configured for supplying a gate charging current to the gate regions in each of the plurality of transistor cells and a second gate signal path configured for discharging a gate discharging current from the gate region.

Dependencies are inferred from the claim text.