Capacitor and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMeng-Han LIN, Meng-Sheng CHANG
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Abstract
An integrated circuit structure includes a substrate, a dielectric material, and a capacitor. The substrate has an active region. The dielectric material is embedded in the substrate and laterally surrounds the active region. The capacitor is disposed over the dielectric material. The capacitor includes a first conductive stack and a second conductive stack. The first conductive stack and the second conductive stack are electrically connected to each other only by a metal line disposed at an uppermost conductive level of the capacitor.
Claims20
An integrated circuit (IC) structure, comprising:
- a substrate having an active region;
- a dielectric material embedded in the substrate and laterally surrounding the active region;
- and
- a capacitor disposed over the dielectric material, the capacitor comprising a first conductive stack and a second conductive stack, wherein the first conductive stack and the second conductive stack are electrically connected to each other only by a metal line disposed at an uppermost conductive level of the capacitor.
An integrated circuit (IC) structure, comprising:
- a substrate having an active region;
- a dielectric material embedded in the substrate and laterally surrounding the active region;
- a capacitor disposed over the dielectric material, the capacitor comprising a first metal strip, a second metal strip, and a third metal strip at a same level height, wherein the first, second, and third metal strips are three immediately adjacent parallel metal strips;
- a plurality of first metal contacts landing on the first metal strip;
- a plurality of second metal contacts landing on the second metal strip;
- and
- a plurality of third metal contacts landing on the third metal strip.
An integrated circuit (IC) structure, comprising:
- a substrate having an active region;
- a dielectric material embedded in the substrate and laterally surrounding the active region;
- a capacitor disposed over the dielectric material, the capacitor comprising a first linear metal strip extending along a lengthwise direction, wherein the first linear metal strip has a first end and a second end opposite the first end of the first linear metal strip in the lengthwise direction;
- and
- a dielectric layer laterally surrounding the first linear metal strip, wherein the first end and the second end of the first linear metal strip are in direct contact with the dielectric layer.
Dependencies are inferred from the claim text.