H10D 84/964
Yield or reliability
Official title: {Yield or reliability}
H10D84/964 (Yield or reliability) appears on 104 US grants and 117 published applications in this corpus.
Search patents in H10D- Granted patents
- 104
- Published applications
- 117
- Assignees
- 12
- Inventors
- 61
- Latest grant
- 26 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2007 | 0 | 1 |
| 2008 | 1 | 0 |
| 2009 | 0 | 1 |
| 2010 | 1 | 58 |
| 2011 | 16 | 0 |
| 2012 | 41 | 1 |
| 2013 | 1 | 8 |
| 2014 | 3 | 0 |
| 2015 | 3 | 2 |
| 2016 | 3 | 2 |
| 2017 | 3 | 8 |
| 2018 | 4 | 5 |
| 2019 | 2 | 5 |
| 2020 | 6 | 6 |
| 2021 | 4 | 6 |
| 2022 | 3 | 3 |
| 2023 | 5 | 4 |
| 2024 | 4 | 3 |
| 2025 | 3 | 0 |
| 2026 | 1 | 4 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Integrated circuit device and method of forming the same26 May 2026US 12,641,875 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor integrated circuit device26 Aug 2025US 12,402,409 B2Socionext Inc.
- Semiconductor integrated circuit device having standard cells including three dimensional transistors20 May 2025US 12,310,103 B2Socionext Inc.
- Semiconductor integrated circuit device21 Jan 2025US 12,205,953 B2Socionext Inc.
- Semiconductor device and method of manufacturing the same20 Aug 2024US 12,068,326 B2Samsung Electronics Co., Ltd.
- Semiconductor device18 Jun 2026US 2026/0173521 A1Samsung Electronics Co., Ltd.
- Integrated circuit device4 Jun 2026US 2026/0156935 A1Samsung Electronics Co., Ltd.
- Semiconductor device and method of fabricating the same30 Apr 2026US 2026/0123046 A1Samsung Electronics Co., Ltd.
- Semiconductor device29 Jan 2026US 2026/0032999 A1Samsung Electronics Co., Ltd.
- Semiconductor device having active fin pattern at cell boundary3 Oct 2024US 2024/0332305 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Dynamic array architecture227US 7,446,352 B2Tela Innovations, Inc. · 2008
- Integrated circuit having gate electrode level region including at least four linear-shaped conductive structures with some outer-contacted linear-shaped conductive structures having larger outer extending portion than inner extending portion159US 8,134,184 B2Tela Innovations, Inc. · 2012
- Dynamic array architecture142US 7,842,975 B2Tela Innovations, Inc. · 2010
- Semiconductor device having at least three linear-shaped electrode level conductive features of equal length positioned side-by-side at equal pitch141US 8,058,671 B2Tela Innovations, Inc. · 2011
- Semiconductor device and associated layouts having transistors formed from linear conductive segment with non-active neighboring linear conductive segment140US 7,910,958 B2Tela Innovations, Inc. · 2011