Integrated circuit device

An integrated circuit device comprising:

• a plurality of fin-type active regions protruding from a substrate and extending lengthwise in a first horizontal direction, the plurality of fin-type active regions being apart from each other in a second horizontal direction that is perpendicular to the first horizontal direction;
• a plurality of source/drain regions respectively on the plurality of fin-type active regions and aligned in a row on a first straight line extending along the second horizontal direction;
• a plurality of source/drain contacts electrically connected to at least one source/drain region from the plurality of source/drain regions, the plurality of source/drain contacts being aligned in a row along the first straight line;
• a plurality of contact isolation insulating structures respectively between the plurality of source/drain contacts and aligned in a row along the first straight line,
• each of the plurality of contact isolation insulating structures comprising a contact isolation insulating pattern and a first isolation insulating liner, the contact isolation insulating pattern having a sidewall contacting a source/drain contact from among the plurality of source/drain contacts that is adjacent to the contact isolation insulating pattern in the second horizontal direction, and the first isolation insulating liner covering sidewalls of the contact isolation insulating pattern in the first horizontal direction and a lower surface of the contact isolation insulating pattern;
• and
• a plurality of second isolation insulating liners respectively covering only first sidewalls of each of the plurality of source/drain contacts in the first horizontal direction from among the first sidewalls of each of the plurality of source/drain contacts in the first horizontal direction and second sidewalls of each of the plurality of source/drain contacts in the second horizontal direction,
• wherein the first isolation insulating liner of each of the plurality of contact isolation insulating structures and each of the plurality of second isolation insulating liners comprise a same constituent material.

An integrated circuit device comprising:

• a plurality of fin-type active regions protruding from a substrate and extending lengthwise in a first horizontal direction, the plurality of fin-type active regions being apart from each other in a second horizontal direction that is perpendicular to the first horizontal direction;
• a plurality of nanosheet stacks over each of the plurality of fin-type active regions, each of the plurality of nanosheet stacks comprising at least one nanosheet;
• a pair of gate lines over the plurality of fin-type active regions and extending lengthwise in the second horizontal direction across the plurality of fin-type active regions parallel to each other, gate lines of the pair of gate lines surrounding the at least one nanosheet of at least one nanosheet stack from the plurality of nanosheet stacks;
• a plurality of source/drain regions respectively on the plurality of fin-type active regions between the pair of gate lines, the plurality of source/drain regions being aligned in a row on a first straight line extending along the second horizontal direction;
• a plurality of source/drain contacts each electrically connected to at least one source/drain region from the plurality of source/drain regions, the plurality of source/drain contacts being aligned in a row along the first straight line;
• a plurality of contact isolation insulating structures respectively between the plurality of source/drain contacts and aligned in a row along the first straight line,
• each of the plurality of contact isolation insulating structures comprising a contact isolation insulating pattern and a first isolation insulating liner, the contact isolation insulating pattern having a sidewall contacting a source/drain contact from among the plurality of source/drain contacts that is adjacent to the contact isolation insulating pattern in the second horizontal direction, and the first isolation insulating liner covering sidewalls of the contact isolation insulating pattern in the first horizontal direction and a lower surface of the contact isolation insulating pattern;
• and
• a plurality of second isolation insulating liners respectively covering only first sidewalls of each of the plurality of source/drain contacts in the first horizontal direction from among the first sidewalls of each of the plurality of source/drain contacts in the first horizontal direction and second sidewalls of each of the plurality of source/drain contacts in the second horizontal direction,
• wherein the first isolation insulating liner of each of the plurality of contact isolation insulating structures and each of the plurality of second isolation insulating liners comprise a same constituent material, the same constituent material comprising silicon nitride, silicon oxide, SiOC, SiOCN, SiCN, SiBN, SiON, SiBCN, SiOF, SiOCH, or a combination thereof.