Semiconductor device and method of fabricating the same

A semiconductor device, comprising:

• a substrate comprising a first active pattern and a second active pattern;
• a first source/drain pattern on the first active pattern;
• a second source/drain pattern on the second active pattern;
• a first active contact on the first source/drain pattern;
• a second active contact on the second source/drain pattern;
• and
• a cutting pattern between the first active contact and the second active contact,
• wherein the cutting pattern comprises:
• a first cutting pattern between the first active contact and the second active contact, the first cutting pattern extending toward the substrate;
• and
• a second cutting pattern on at least one lateral surface of the first cutting pattern and a bottom surface of the first cutting pattern,
• wherein the first cutting pattern comprises:
• a first lateral surface that faces the first active contact;
• and
• a second lateral surface across from the first lateral surface,
• wherein the second cutting pattern comprises:
• a first cutting portion on the first lateral surface of the first cutting pattern, the first cutting portion having a first thickness;
• and
• a second cutting portion on the second lateral surface of the first cutting pattern, the second cutting portion having a second thickness,
• wherein the first thickness is different from the second thickness.

A semiconductor device, comprising:

• a substrate comprising a first active pattern and a second active pattern;
• a device isolation layer between the first active pattern and the second active pattern;
• a first source/drain pattern on the first active pattern;
• a first channel pattern on the first active pattern;
• a second source/drain pattern on the second active pattern;
• a second channel pattern on the second active pattern;
• a gate electrode across the first channel pattern and the second channel pattern;
• a first active contact on the first source/drain pattern;
• a second active contact on the second source/drain pattern;
• and
• a cutting pattern between the first active contact and the second active contact,
• wherein the cutting pattern comprises:
• a first cutting pattern between the first active contact and the second active contact, the first cutting pattern extending toward the substrate;
• and
• a second cutting pattern on at least one lateral surface of the first cutting pattern and a bottom surface of the first cutting pattern, the second cutting pattern exposing at least a portion of the at least one lateral surface of the first cutting pattern.