H10D 84/409
Combinations of fets or igbts with lateral bjts and with one or
Official title: {Combinations of FETs or IGBTs with lateral BJTs and with one or more of diodes, resistors or capacitors}
H10D84/409 (Combinations of fets or igbts with lateral bjts and with one or) appears on 87 US grants and 46 published applications in this corpus.
Search patents in H10D- Granted patents
- 87
- Published applications
- 46
- Assignees
- 52
- Inventors
- 139
- Latest grant
- 28 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 2 | 0 |
| 1979 | 0 | 0 |
| 1980 | 3 | 0 |
| 1981 | 2 | 0 |
| 1982 | 2 | 0 |
| 1983 | 2 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 4 | 0 |
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 3 | 0 |
| 1996 | 4 | 0 |
| 1997 | 1 | 0 |
| 1998 | 4 | 0 |
| 1999 | 3 | 0 |
| 2000 | 4 | 0 |
| 2001 | 1 | 0 |
| 2002 | 1 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 1 |
| 2006 | 0 | 1 |
| 2007 | 0 | 2 |
| 2008 | 1 | 2 |
| 2009 | 1 | 2 |
| 2010 | 2 | 2 |
| 2011 | 3 | 0 |
| 2012 | 1 | 0 |
| 2013 | 0 | 1 |
| 2014 | 2 | 3 |
| 2015 | 3 | 3 |
| 2016 | 3 | 5 |
| 2017 | 4 | 2 |
| 2018 | 6 | 6 |
| 2019 | 2 | 2 |
| 2020 | 3 | 2 |
| 2021 | 2 | 5 |
| 2022 | 1 | 0 |
| 2023 | 0 | 0 |
| 2024 | 5 | 3 |
| 2025 | 1 | 3 |
| 2026 | 2 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Bipolar junction transistor (BJT) structure28 Jul 2026US 12,696,526 B2Mediatek Inc.
- Power semiconductor device19 May 2026US 12,635,228 B2DB HiTek Co., Ltd.
- Semiconductor device configured for gate dielectric monitoring14 Oct 2025US 12,442,850 B2Analog Devices International Unlimited Company
- Wide bandgap semiconductor device with sensor element27 Aug 2024US 12,074,079 B2Wolfspeed, Inc.
- Planar and non-planar FET-based electrostatic discharge protection devices30 Jul 2024US 12,051,691 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device in forksheet transistor structure including passive device and bspdn structure23 Apr 2026US 2026/0114026 A1Samsung Electronics Co., Ltd.
- Semiconductor device30 Jan 2025US 2025/0040216 A1Samsung Electronics Co., Ltd.
- Semiconductor device configured for gate dielectric monitoring2 Jan 2025US 2025/0004034 A1Analog Devices International Unlimited Company
- Fail-safe and fail-tolerant input/output interface immune from latchup2 Jan 2025US 2025/0006725 A1STMicroelectronics International N. V.
- Planar and non-planar fet-based electrostatic discharge protection devices17 Oct 2024US 2024/0347531 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Voltage-driven type semiconductor device112US 5,572,048 AHitachi, Ltd. · 1996
- Gate controlled lateral bipolar junction transistor49US 5,717,241 ANorthern Telecom Limited · 1998
- IGFET with gate protection diode and antiparasitic isolation means42US 4,044,373 AHitachi, Ltd. · 1977
- Semiconductor protection device having a bipolar lateral transistor32US 4,131,908 AU. S. Philips Corporation · 1978
- Semiconductor integrated circuit31US 5,834,814 AKabushiki Kaisha Toshiba · 1998