H10D 84/401
Combinations of fets or igbts with bjts
Official title: {Combinations of FETs or IGBTs with BJTs}
H10D84/401 (Combinations of fets or igbts with bjts) appears on 2,245 US grants and 1,715 published applications in this corpus.
Search patents in H10D- Granted patents
- 2,245
- Published applications
- 1,715
- Assignees
- 454
- Inventors
- 3,304
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 11 | 0 |
| 1977 | 20 | 0 |
| 1978 | 13 | 0 |
| 1979 | 7 | 0 |
| 1980 | 9 | 0 |
| 1981 | 12 | 0 |
| 1982 | 8 | 0 |
| 1983 | 8 | 0 |
| 1984 | 12 | 0 |
| 1985 | 6 | 0 |
| 1986 | 11 | 0 |
| 1987 | 12 | 0 |
| 1988 | 20 | 0 |
| 1989 | 38 | 0 |
| 1990 | 33 | 0 |
| 1991 | 49 | 0 |
| 1992 | 40 | 0 |
| 1993 | 41 | 0 |
| 1994 | 39 | 0 |
| 1995 | 61 | 0 |
| 1996 | 50 | 0 |
| 1997 | 51 | 0 |
| 1998 | 50 | 0 |
| 1999 | 51 | 0 |
| 2000 | 54 | 0 |
| 2001 | 36 | 17 |
| 2002 | 49 | 42 |
| 2003 | 36 | 48 |
| 2004 | 38 | 44 |
| 2005 | 45 | 58 |
| 2006 | 38 | 40 |
| 2007 | 32 | 53 |
| 2008 | 25 | 69 |
| 2009 | 45 | 59 |
| 2010 | 54 | 50 |
| 2011 | 50 | 50 |
| 2012 | 53 | 54 |
| 2013 | 61 | 57 |
| 2014 | 68 | 70 |
| 2015 | 73 | 103 |
| 2016 | 103 | 111 |
| 2017 | 108 | 107 |
| 2018 | 108 | 103 |
| 2019 | 99 | 108 |
| 2020 | 92 | 84 |
| 2021 | 67 | 68 |
| 2022 | 68 | 70 |
| 2023 | 62 | 78 |
| 2024 | 56 | 71 |
| 2025 | 50 | 71 |
| 2026 | 23 | 30 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Power device integration on a common substrate25 Aug 2026US 12,720,815 B2Silanna Asia Pte Ltd
- Compatible hybrid-cell structure, device having the same, and method25 Aug 2026US 12,720,861 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device18 Aug 2026US 12,713,690 B2Mediatek Inc.
- Bipolar junction transistor (BJT) structure28 Jul 2026US 12,696,526 B2Mediatek Inc.
- Manufacturing method for semiconductor device21 Jul 2026US 12,690,210 B2Mitsubishi Electric Corporation
- Bipolar junction transistors with nanosheet structures and methods for manufacturing the same1 Oct 2026US 2026/0304808 A1Tokyo Electron Limited
- Semiconductor device having non-metal-oxide semiconductor capacitor and mos capacitor regions with doped fin-shaped structures and method for fabricating the same24 Sep 2026US 2026/0293176 A1United Microelectronics Corp.
- Method for forming a crystalline protective polysilicon layer24 Sep 2026US 2026/0293279 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device including a gate trench in an inter-pad region3 Sep 2026US 2026/0262253 A1Fuji Electric Co., Ltd.
- Improved polysilicon resistors using implanted chlorine within an integrated circuit3 Sep 2026US 2026/0262280 A1
Most cited
By later US patents
- Semiconductor structure having two levels of buried regions185US 5,889,315 ANational Semiconductor Corporation · 1999
- Semiconductor integrated circuit unit182US 5,412,558 AHitachi Haramachi Semiconductor Ltd. · 1995
- Monolithic class D amplifier170US 5,973,368 A1999
- Fabrication of semiconductor structure having two levels of buried regions159US 5,899,714 ANational Semiconductor Corporation · 1999
- Method for forming a transistor base region under thick oxide148US 4,958,213 ATexas Instruments Incorporated · 1990