H10D 84/403
Combinations of fets or igbts with bjts and with one or more
Official title: {Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors}
H10D84/403 (Combinations of fets or igbts with bjts and with one or more) appears on 755 US grants and 584 published applications in this corpus.
Search patents in H10D- Granted patents
- 755
- Published applications
- 584
- Assignees
- 219
- Inventors
- 1,224
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 8 | 0 |
| 1977 | 13 | 0 |
| 1978 | 8 | 0 |
| 1979 | 5 | 0 |
| 1980 | 5 | 0 |
| 1981 | 9 | 0 |
| 1982 | 5 | 0 |
| 1983 | 4 | 0 |
| 1984 | 7 | 0 |
| 1985 | 2 | 0 |
| 1986 | 5 | 0 |
| 1987 | 7 | 0 |
| 1988 | 10 | 0 |
| 1989 | 9 | 0 |
| 1990 | 7 | 0 |
| 1991 | 8 | 0 |
| 1992 | 8 | 0 |
| 1993 | 5 | 0 |
| 1994 | 5 | 0 |
| 1995 | 16 | 0 |
| 1996 | 18 | 0 |
| 1997 | 11 | 0 |
| 1998 | 13 | 0 |
| 1999 | 17 | 0 |
| 2000 | 19 | 0 |
| 2001 | 12 | 7 |
| 2002 | 14 | 6 |
| 2003 | 12 | 11 |
| 2004 | 7 | 5 |
| 2005 | 6 | 8 |
| 2006 | 4 | 3 |
| 2007 | 0 | 7 |
| 2008 | 3 | 12 |
| 2009 | 2 | 8 |
| 2010 | 6 | 11 |
| 2011 | 15 | 9 |
| 2012 | 12 | 13 |
| 2013 | 11 | 18 |
| 2014 | 22 | 26 |
| 2015 | 25 | 35 |
| 2016 | 40 | 47 |
| 2017 | 45 | 53 |
| 2018 | 55 | 56 |
| 2019 | 40 | 63 |
| 2020 | 57 | 46 |
| 2021 | 35 | 35 |
| 2022 | 29 | 30 |
| 2023 | 26 | 26 |
| 2024 | 25 | 23 |
| 2025 | 19 | 16 |
| 2026 | 9 | 10 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Power device integration on a common substrate25 Aug 2026US 12,720,815 B2Silanna Asia Pte Ltd
- Bipolar junction transistor (BJT) structure28 Jul 2026US 12,696,526 B2Mediatek Inc.
- Manufacturing method for semiconductor device21 Jul 2026US 12,690,210 B2Mitsubishi Electric Corporation
- Polysilicon resistor aligned between gate structures23 Jun 2026US 12,666,698 B2GLOBALFOUNDRIES U. S. Inc.
- Semiconductor device having non-metal semiconductor capacitor and MOS capacitor regions with doped fin-shaped structures and method for fabricating the same16 Jun 2026US 12,660,224 B2United Microelectronics Corp.
- Semiconductor device having non-metal-oxide semiconductor capacitor and mos capacitor regions with doped fin-shaped structures and method for fabricating the same24 Sep 2026US 2026/0293176 A1United Microelectronics Corp.
- Semiconductor device including a gate trench in an inter-pad region3 Sep 2026US 2026/0262253 A1Fuji Electric Co., Ltd.
- Improved polysilicon resistors using implanted chlorine within an integrated circuit3 Sep 2026US 2026/0262280 A1
- Integrated circuit structures with nanoribbon transistors and backside capacitors13 Aug 2026US 2026/0239717 A1
- Semiconductor device14 May 2026US 2026/0136646 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Semiconductor integrated circuit unit182US 5,412,558 AHitachi Haramachi Semiconductor Ltd. · 1995
- Combined DMOS and a vertical bipolar transistor device and fabrication method therefor130US 4,344,081 ASupertex, Inc. · 1982
- Combined bipolar-field effect transistor resurf devices127US 4,639,761 ANorth American Philips Corporation · 1987
- BICDMOS structures126US 5,426,328 ASiliconix Incorporated · 1995
- Merged bipolar and insulated gate transistors124US 5,028,977 AMassachusetts Institute of Technology · 1991