Improved polysilicon resistors using implanted chlorine within an integrated circuit

Abstract

A method of forming an integrated circuit comprises: (i) forming plural semiconductor bodies, over a semiconductor substrate, wherein a first semiconductor body in the plural semiconductor bodies corresponds to a resistor and a second semiconductor body in the plural semiconductor bodies corresponds to a transistor; (ii) forming a mask over the semiconductor substrate, the mask including a first open area providing an unmasked portion of the first semiconductor body and a second open area providing an unmasked portion in or adjacent to the second semiconductor body; and (iii) implanting at least one of an n-type or p-type dopant, and chlorine, through the first open area into the first semiconductor body and through the second open area into a region in or adjacent the second semiconductor body.

Dependencies are inferred from the claim text.