H10D 84/406
Combinations of fets or igbts with vertical bjts and with one or
Official title: {Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors}
H10D84/406 (Combinations of fets or igbts with vertical bjts and with one or) appears on 223 US grants and 124 published applications in this corpus.
Search patents in H10D- Granted patents
- 223
- Published applications
- 124
- Assignees
- 83
- Inventors
- 327
- Latest grant
- 28 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 11 | 0 |
| 1978 | 6 | 0 |
| 1979 | 4 | 0 |
| 1980 | 1 | 0 |
| 1981 | 5 | 0 |
| 1982 | 4 | 0 |
| 1983 | 2 | 0 |
| 1984 | 5 | 0 |
| 1985 | 1 | 0 |
| 1986 | 5 | 0 |
| 1987 | 4 | 0 |
| 1988 | 6 | 0 |
| 1989 | 7 | 0 |
| 1990 | 5 | 0 |
| 1991 | 7 | 0 |
| 1992 | 8 | 0 |
| 1993 | 2 | 0 |
| 1994 | 2 | 0 |
| 1995 | 4 | 0 |
| 1996 | 8 | 0 |
| 1997 | 4 | 0 |
| 1998 | 2 | 0 |
| 1999 | 5 | 0 |
| 2000 | 2 | 0 |
| 2001 | 3 | 0 |
| 2002 | 0 | 0 |
| 2003 | 1 | 1 |
| 2004 | 0 | 2 |
| 2005 | 2 | 2 |
| 2006 | 0 | 1 |
| 2007 | 0 | 0 |
| 2008 | 0 | 3 |
| 2009 | 0 | 0 |
| 2010 | 0 | 3 |
| 2011 | 4 | 1 |
| 2012 | 2 | 0 |
| 2013 | 2 | 3 |
| 2014 | 4 | 5 |
| 2015 | 0 | 4 |
| 2016 | 8 | 8 |
| 2017 | 8 | 9 |
| 2018 | 8 | 10 |
| 2019 | 8 | 28 |
| 2020 | 27 | 15 |
| 2021 | 9 | 10 |
| 2022 | 6 | 6 |
| 2023 | 7 | 4 |
| 2024 | 4 | 4 |
| 2025 | 4 | 2 |
| 2026 | 3 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device including a gate trench in an inter-pad region28 Apr 2026US 12,615,800 B2Fuji Electric Co., Ltd.
- Compositions and methods for marking hydrocarbon compositions with non-mutagenic dyes17 Mar 2026US 12,577,484 B2United Color Manufacturing, Inc.
- Semiconductor device10 Mar 2026US 12,575,166 B2Fuji Electric Co., Ltd.
- Substrate current suppression circuit, reference voltage generation circuit, and semiconductor device19 Aug 2025US 12,393,220 B2Panasonic Intellectual Property Management Co., Ltd.
- Semiconductor device27 May 2025US 12,317,560 B2Fuji Electric Co., Ltd.
- Semiconductor device including a gate trench in an inter-pad region3 Sep 2026US 2026/0262253 A1Fuji Electric Co., Ltd.
- Semiconductor device14 May 2026US 2026/0136646 A1Samsung Electronics Co., Ltd.
- Semiconductor device5 Feb 2026US 2026/0040661 A1Fuji Electric Co., Ltd.
- Semiconductor device11 Sep 2025US 2025/0287664 A1Fuji Electric Co., Ltd.
- Semiconductor device24 Apr 2025US 2025/0133795 A1Fuji Electric Co., Ltd.
Most cited
By later US patents
- Combined DMOS and a vertical bipolar transistor device and fabrication method therefor130US 4,344,081 ASupertex, Inc. · 1982
- Combined bipolar-field effect transistor resurf devices127US 4,639,761 ANorth American Philips Corporation · 1987
- Merged bipolar and insulated gate transistors124US 5,028,977 AMassachusetts Institute of Technology · 1991
- Voltage-driven type semiconductor device112US 5,572,048 AHitachi, Ltd. · 1996
- Circuit producing a common clear signal for erasing selected arrays in a MNOS memory system68US 4,099,069 AWestinghouse Electric Corp. · 1978