Semiconductor device

A semiconductor device comprising:

• a semiconductor substrate including a first region having a first thickness and a second region having a second thickness that is different from the first thickness;
• an upper-surface electrode provided above an upper surface of the semiconductor substrate;
• a drift region of a first conductivity type provided inside the semiconductor substrate;
• a buffer region provided on a lower-surface of the drift region and having a higher doping concentration than the drift region;
• a cathode region of the first conductivity type that is exposed at a lower surface of the semiconductor substrate, the cathode region having a higher doping concentration than the drift region;
• a base region of a second conductivity type provided in the first region and between the drift region and the upper surface of the semiconductor substrate;
• an anode region of the second conductivity type provided in the second region and between the drift region and the upper surface of the semiconductor substrate;
• and
• a plurality of trench portions that are provided from the upper surface of the semiconductor substrate so as to reach the drift region and each having linear parts extending in a linear shape along a first direction in a top view, wherein
• the linear parts of the trench portion end within the first region;
• and wherein
• a main element portion is provided in the first region,
• the second region is provided in a region other than the main element portion,
• the base region is an anode of a first diode portion provided in the first region, sandwiched in a width direction between a pair of the trench portions having the linear parts, the base region facing toward the cathode region in a depth direction,
• the anode region is an anode of a second diode portion provided in the second region, and
• the first diode portion is formed in a region having the first thickness in the first region, and the second diode portion is formed in a region having the second thickness in the second region.

A semiconductor device comprising:

• a semiconductor substrate including a first region having a first thickness and a second region having a second thickness that is different from the first thickness;
• an upper-surface electrode provided above an upper surface of the semiconductor substrate;
• a drift region of a first conductivity type provided inside the semiconductor substrate;
• a buffer region provided on a lower-surface of the drift region and having a higher doping concentration than the drift region;
• a cathode region of the first conductivity type that is exposed at a lower surface of the semiconductor substrate, the cathode region having a higher doping concentration than the drift region;
• a base region of a second conductivity type provided in the first region and between the drift region and the upper surface of the semiconductor substrate;
• and
• an anode region of the second conductivity type provided in the second region and between the drift region and the upper surface of the semiconductor substrate;
• and
• an edge termination structure that surrounds a main element portion on the upper surface of the semiconductor substrate, the main element portion being provided in the first region, wherein
• a step connecting the first region and the second region is provided between the main element portion and the edge termination structure;
• wherein
• the second region is provided in a region other than the main element portion,
• the base region is an anode of a first diode portion provided in the first region, facing toward a portion of the cathode region in the first region,
• the anode region is an anode of a second diode portion provided in the second region, facing toward a portion of the cathode region in the second region, and
• the first diode portion is formed in a region having the first thickness in the first region, and the second diode portion is formed in a region having the second thickness in the second region.