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US 12,317,560 B2Granted
Semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorsYasunori Agata, Takashi Yoshimura, Hiroshi Takishita
Life of this patent
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Abstract
A semiconductor device including a drift region and a buffer region is provided. The drift region of a first conductivity type is provided in a semiconductor substrate. The buffer region of the first conductivity type includes at least six peaks in a doping concentration distribution in a depth direction of the semiconductor substrate. A curve connecting the at least six peaks includes an upwardly-convex portion.
Claims19
A semiconductor device comprising:
- a drift region of a first conductivity type provided in a semiconductor substrate;
- and
- a buffer region of the first conductivity type, the buffer region including at least six peaks in a doping concentration distribution in a depth direction of the semiconductor substrate, a curve connecting the at least six peaks including an upwardly-convex portion.
A semiconductor device comprising:
- a drift region of a first conductivity type provided in a semiconductor substrate;
- and
- a buffer region of the first conductivity type, the buffer region including at least five peaks in a doping concentration distribution in a depth direction of the semiconductor substrate, a shape of a curve connecting the at least five peaks being upwardly-convex.
Dependencies are inferred from the claim text.