Semiconductor device including a gate trench in an inter-pad region

A semiconductor device comprising:

• a transistor portion in which a transistor device is provided in a semiconductor substrate, the transistor device being provided in a main active portion configuring an active region where a principal current flows and disposed inside an edge terminal structure portion of the semiconductor substrate;
• a temperature sensor disposed substantially in a middle of the transistor portion in a top view;
• a plurality of pads arranged along a first end side of the semiconductor substrate in the top view, the plurality of pads electrically connecting to the transistor device and the temperature sensor;
• an inter-pad region disposed between two pads among the plurality of pads, the plurality of pads and the inter-pad region being disposed between the main active portion and the first end side in the top view;
• the transistor portion including a first trench portion and a second trench portion provided in the semiconductor substrate and extending in a second direction substantially perpendicular to a first direction parallel to the first end side;
• and
• a current sensor provided in the semiconductor substrate to measure the principal current, wherein
• the plurality of pads include a current sensing pad, a cathode pad, and an anode pad, and
• the transistor portion is formed up to a region adjacent to at least any one of the current sensing pad, the cathode pad, and the anode pad in the first direction,
• the edge terminal structure portion includes at least one of a guard ring, a field plate, and a RESURF (Reduced Surface Field),
• a first temperature sensing wiring and a second temperature sensing wiring extending from the temperature sensor toward the first end side in the second direction substantially perpendicular to the first direction in the top view,
• the first temperature sensing wiring is connected to the temperature sensor and the cathode pad,
• the second temperature sensing wiring is connected to the temperature sensor and the anode pad,
• a first trench portion that is provided in the semiconductor substrate and extends in the second direction, wherein an edge portion of the first trench portion closer to the first end side in the top view ends within the main active portion,
• a second trench portion that is provided in the semiconductor substrate and extends in the second direction, wherein the second trench portion on a side closer to the first end side extends into the inter-pad region in the top view,
• the transistor portion is formed up to a region adjacent to at least any one of the plurality of pads in a first direction parallel to the first end side,
• the temperature sensor is disposed substantially in a middle of the main active portion in the top view, and
• the plurality of pads include a gate pad electrically connected to a gate of the transistor device and an emitter pad electrically connected to an emitter of the transistor device.

A semiconductor device having (i) an edge terminal structure portion including at least one of a guard ring, a field plate, or a RESURF (Reduced Surface Field) and (ii) a main active portion provided inside the edge terminal structure portion, the semiconductor device comprising:

• a transistor portion in which a transistor device is provided in a semiconductor substrate, the transistor device being provided in the main active portion configuring an active region where a principal current flows and disposed inside an edge terminal structure portion of the semiconductor substrate;
• a temperature sensor disposed substantially in a middle of the main active portion in a top view;
• a plurality of pads arranged along a first end side of the semiconductor substrate in the top view, the plurality of pads electrically connecting to the transistor device and the temperature sensor;
• and
• an inter-pad region provided between two pads among the plurality of pads, the plurality of pads and the inter-pad region being disposed between the main active portion and the first end side in the top view, wherein
• the transistor portion is also provided in the inter-pad region in the top view.