Semiconductor device
AssigneeMediatek Inc.
InventorsCheng-Hua Lin, Yan-Liang Ji
Life of this patent
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Abstract
A semiconductor device is provided. The semiconductor device includes a substrate, a gate strip, a source doped region and a body doped region. The substrate has an active region. The gate strip is disposed on the substrate within the active region. The gate strip extends along a first direction. The source doped region is located in the active region and adjacent to a first side of the gate strip along the first direction. The body doped region is located in the active region and adjacent to the first side of the gate strip. The body doped region and the source doped region have opposite conductivity types. The body doped region has a first length along a second direction that is different from the first direction, wherein the first length gradually changes along the first direction.
Claims32
A semiconductor device, comprising:
- a substrate having an active region;
- a gate strip disposed on the substrate within the active region, wherein the gate strip extends along a first direction;
- a source doped region located in the active region and adjacent to a first side of the gate strip along the first direction;
- and
- a body doped region located in the active region and adjacent to the first side of the gate strip, wherein the body doped region and the source doped region have opposite conductivity types, wherein the body doped region has a first length along a second direction that is different from the first direction, wherein the first length gradually changes along the first direction, and wherein the semiconductor device includes a power metal-oxide-semiconductor field effect transistor (MOSFET) device, the first direction is a channel length direction, and the second direction is a channel width direction.
A semiconductor device, comprising:
- a substrate of a first conductivity type having an active region;
- a first gate strip disposed on the substrate within the active region, wherein the first gate strip extends along a first direction;
- a source doped region of a second conductivity type located in the active region and adjacent to a first side of the gate strip;
- and
- a body doped region of the first conductivity type located in the active region and adjacent to the first side of the first gate strip, wherein the body doped region has least one edge close to the first side of the first gate strip, wherein an extended line of the edge of the body doped region meets the first side of the first gate strip, and wherein an angle between the extended line and the first side of the first gate strip is an acute angle.
A semiconductor device, comprising:
- a substrate of a first conductivity type having an active region;
- a gate strip disposed on the substrate within the active region, wherein the gate strip extends along a first direction;
- a source doped region of a second conductivity type disposed in the active region and adjacent to a first side of the gate strip;
- and
- a body doped region of the first conductivity type disposed in the active region and adjacent to the first side of the gate strip, wherein ratios of widths of the body doped region to widths of the source doped region in cross-sectional views in the first direction are gradually increased along a direction away from the first gate strip.
Dependencies are inferred from the claim text.