Power semiconductor device

A power semiconductor device comprising:

• a high voltage unit configured to output a high voltage;
• a low voltage unit configured to output a low voltage;
• a capacitor electrically connected to the high voltage unit and configured to supply power to the high voltage unit while the high voltage is output;
• a switching unit electrically connected to the high voltage unit and the capacitor and configured to connect the capacitor to a driving power source to charge the capacitor while the low voltage is output and to prevent the high voltage unit from being electrically connected to the driving power source while the high voltage is output;
• and
• a resistance unit electrically connected between the switching unit and the high voltage unit and configured to drop the high voltage to a voltage lower than a breakdown voltage of the switching unit while the high voltage is output,
• wherein the resistance unit comprises an N-type impurity diffusion region in an upper portion of an N-type epitaxial layer in a substrate and electrically connected between the switching unit and the high voltage unit.