Wide bandgap semiconductor device with sensor element

A semiconductor device comprising:

• a drift layer comprising a wide bandgap semiconductor material;
• an embedded sensor element;
• an insulating layer between the drift layer and the embedded sensor element;
• a shielding well between the drift layer and the embedded sensor element;
• and
• an additional functional layer and an additional insulating layer between the drift layer and the embedded sensor element,
• wherein the insulating layer is on the drift layer, the additional functional layer is on the insulating layer, the additional insulating layer is on the additional functional layer, and the embedded sensor element is on the additional insulating layer.

A semiconductor device comprising:

• a substrate;
• a drift layer on the substrate;
• an insulating layer on the drift layer;
• a first functional layer on the insulating layer;
• an additional insulating layer on the first functional layer;
• and
• a lumped resistor element on the additional insulating layer.