H10D 84/217
Of only conductor-insulator-semiconductor capacitors
Official title: {of only conductor-insulator-semiconductor capacitors}
H10D84/217 (Of only conductor-insulator-semiconductor capacitors) appears on 207 US grants and 229 published applications in this corpus.
Search patents in H10D- Granted patents
- 207
- Published applications
- 229
- Assignees
- 100
- Inventors
- 365
- Latest grant
- 23 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 2 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 2 | 0 |
| 2001 | 4 | 2 |
| 2002 | 3 | 0 |
| 2003 | 6 | 14 |
| 2004 | 6 | 8 |
| 2005 | 15 | 20 |
| 2006 | 11 | 21 |
| 2007 | 13 | 23 |
| 2008 | 12 | 10 |
| 2009 | 13 | 17 |
| 2010 | 14 | 14 |
| 2011 | 13 | 10 |
| 2012 | 9 | 12 |
| 2013 | 6 | 16 |
| 2014 | 18 | 12 |
| 2015 | 12 | 9 |
| 2016 | 10 | 7 |
| 2017 | 9 | 8 |
| 2018 | 7 | 4 |
| 2019 | 8 | 4 |
| 2020 | 2 | 5 |
| 2021 | 3 | 2 |
| 2022 | 2 | 0 |
| 2023 | 2 | 4 |
| 2024 | 2 | 1 |
| 2025 | 1 | 1 |
| 2026 | 1 | 5 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Combined MOS/MIS capacitor assembly14 Oct 2025US 12,446,299 B2KYOCERA AVX Components Corporation
- Capacitor cell and structure thereof17 Dec 2024US 12,170,283 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device having capacitor and manufacturing method thereof10 Sep 2024US 12,087,809 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Decoupling FinFET capacitors5 Sep 2023US 11,749,759 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Decoupling finfet capacitors8 Oct 2026US 2026/0313922 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Structure and method to provide capacitive junction with contact bars of different depths24 Sep 2026US 2026/0293171 A1Globalfoundries Singapore Pte. Ltd.
- Semiconductor device including deep trench capacitor24 Sep 2026US 2026/0293290 A1DB HiTek Co., Ltd.
- Integrated circuit devices including high-density capacitors7 May 2026US 2026/0129885 A1Samsung Electronics Co., Ltd.
- Combined MOS/MIS Capacitor Assembly15 Jan 2026US 2026/0020327 A1KYOCERA AVX Components Corporation
Most cited
By later US patents
- Potential detector and semiconductor integrated circuit100US 6,486,729 B2Kabushiki Kaisha Toshiba · 2002
- Decoupling capacitor for high frequency noise immunity76US 6,700,771 B2Micron Technology, Inc. · 2004
- Method of forming a semiconductor diode with depleted polysilicon gate structure73US 6,232,163 B1International Business Machines Corporation · 2001
- Semiconductor integrated circuit device including means for reducing the amount of potential variation on a reference voltage line59US 4,477,736 AHitachi, Ltd. · 1984
- Semiconductor diode with depleted polysilicon gate structure and method57US 6,015,993 AInternational Business Machines Corporation · 2000