Semiconductor device having capacitor and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMeng-Han Lin, Te-Hsin Chiu, Wei Cheng Wu, Te-An Chen
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Abstract
A semiconductor device and a manufacturing method thereof are provided. The method includes forming an isolation structure in a substrate to define an isolating region and forming a capacitor structure on an upper surface of the isolation structure and comprising a first semiconductor structure and a second semiconductor structure separated by an insulator pattern. The first semiconductor structure and the second semiconductor structure are formed with upper surfaces aligned with one another.
Claims20
A method of manufacturing a semiconductor device, comprising:
- forming an isolation structure in a substrate to define an isolating region;
- forming a capacitor structure on an upper surface of the isolation structure and comprising a first semiconductor structure and a second semiconductor structure separated by an insulator pattern, wherein the insulator pattern is formed directly contacting an inner sidewall of the first semiconductor structure;
- and
- forming a spacer on a sidewall of the second semiconductor structure, separating the second semiconductor structure and the insulator pattern,
- wherein the first semiconductor structure and the second semiconductor structure are formed with upper surfaces aligned with one another.
A method of manufacturing a semiconductor device, comprising:
- forming an isolation structure in a substrate to define an isolating region;
- forming a first semiconductor structure and a second semiconductor structure on an upper surface of the isolation structure;
- and
- forming an insulator pattern between and separating the first semiconductor structure and the second semiconductor structure;
- and
- wherein the first semiconductor structure comprises a lightly doped portion closer to the insulator pattern and a heavily doped portion farther from the insulator pattern, the lightly doped portion having a doping concentration lower than that of the heavily doped portion,
- wherein the first semiconductor structure or and the second semiconductor structure has a planar shape with a constant height.
A method of manufacturing a semiconductor device, comprising:
- forming an isolation structure in a substrate to define an isolating region;
- forming a semiconductor material pattern on the isolation structure;
- forming a lightly doped portion with a first doping concentration in the semiconductor material pattern by performing a first ion implantation process to the semiconductor material pattern in the isolating region;
- forming at least one heavily doped portion in the semiconductor material pattern by performing a second ion implantation process to the semiconductor material pattern in the isolating region, wherein the at least one heavily doped portion has a doping concentration higher than the first doping concentration;
- and
- forming an insulator material layer over the substrate covering the semiconductor material pattern in the isolating region, wherein the insulator material layer at least fills up a gap of the semiconductor material pattern.
Dependencies are inferred from the claim text.