H10D 84/017
Manufacturing their source or drain regions
Official title: {Manufacturing their source or drain regions, e.g. silicided source or drain regions}
H10D84/017 (Manufacturing their source or drain regions) appears on 5,456 US grants and 6,600 published applications in this corpus.
Search patents in H10D- Granted patents
- 5,456
- Published applications
- 6,600
- Assignees
- 486
- Inventors
- 6,316
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 5 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 4 | 0 |
| 1984 | 5 | 0 |
| 1985 | 3 | 0 |
| 1986 | 1 | 0 |
| 1987 | 2 | 0 |
| 1988 | 3 | 0 |
| 1989 | 3 | 0 |
| 1990 | 10 | 0 |
| 1991 | 11 | 0 |
| 1992 | 2 | 0 |
| 1993 | 4 | 0 |
| 1994 | 9 | 0 |
| 1995 | 6 | 0 |
| 1996 | 18 | 0 |
| 1997 | 17 | 0 |
| 1998 | 36 | 0 |
| 1999 | 36 | 0 |
| 2000 | 42 | 0 |
| 2001 | 52 | 22 |
| 2002 | 71 | 78 |
| 2003 | 70 | 71 |
| 2004 | 60 | 86 |
| 2005 | 65 | 153 |
| 2006 | 98 | 200 |
| 2007 | 130 | 214 |
| 2008 | 112 | 227 |
| 2009 | 124 | 188 |
| 2010 | 183 | 179 |
| 2011 | 179 | 188 |
| 2012 | 186 | 231 |
| 2013 | 217 | 243 |
| 2014 | 242 | 222 |
| 2015 | 253 | 262 |
| 2016 | 305 | 314 |
| 2017 | 308 | 300 |
| 2018 | 310 | 300 |
| 2019 | 324 | 312 |
| 2020 | 316 | 403 |
| 2021 | 290 | 339 |
| 2022 | 271 | 355 |
| 2023 | 244 | 453 |
| 2024 | 295 | 470 |
| 2025 | 320 | 482 |
| 2026 | 212 | 308 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Backside power distribution network and signal line integration6 Oct 2026US 12,757,444 B2International Business Machines Corporation
- Method for forming semiconductor structure6 Oct 2026US 12,757,456 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device having source/drain pattern including multiple layers with different conductivity type6 Oct 2026US 12,757,458 B2Samsung Electronics Co., Ltd.
- Low-K gate spacer and methods for forming the same6 Oct 2026US 12,757,467 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit device6 Oct 2026US 12,757,482 B2Samsung Electronics Co., Ltd.
- Multigate device and method of fabrication thereof8 Oct 2026US 2026/0313944 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Field effect transistor having segmented channel region8 Oct 2026US 2026/0313947 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Device having extended source/drain contact and method8 Oct 2026US 2026/0313963 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure including bottom isolation and method for manufacturing the same8 Oct 2026US 2026/0313965 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method thereof8 Oct 2026US 2026/0313970 A1National Tsing Hua University
Most cited
By later US patents
- Method of cutting metal gate3,322US 9,520,482 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Strained structure of semiconductor device and method of making the strained structure614US 9,171,929 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Strained channel integrated circuit devices569US 8,729,627 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Low temperature CVD process with selected stress of the CVD layer on CMOS devices559US 7,393,765 B2APPLIED Materials.Inc. · 2008
- Germanium FinFETs with metal gates and stressors556US 9,245,805 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016