H10D 84/0167
Manufacturing their channels
Official title: {Manufacturing their channels}
H10D84/0167 (Manufacturing their channels) appears on 6,440 US grants and 7,961 published applications in this corpus.
Search patents in H10D- Granted patents
- 6,440
- Published applications
- 7,961
- Assignees
- 529
- Inventors
- 6,625
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 2 | 0 |
| 1981 | 2 | 0 |
| 1982 | 0 | 0 |
| 1983 | 2 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 2 | 0 |
| 1987 | 1 | 0 |
| 1988 | 2 | 0 |
| 1989 | 4 | 0 |
| 1990 | 4 | 0 |
| 1991 | 7 | 0 |
| 1992 | 2 | 0 |
| 1993 | 9 | 0 |
| 1994 | 6 | 0 |
| 1995 | 13 | 0 |
| 1996 | 15 | 0 |
| 1997 | 15 | 0 |
| 1998 | 24 | 0 |
| 1999 | 20 | 0 |
| 2000 | 32 | 0 |
| 2001 | 51 | 18 |
| 2002 | 45 | 59 |
| 2003 | 55 | 62 |
| 2004 | 73 | 107 |
| 2005 | 80 | 218 |
| 2006 | 125 | 277 |
| 2007 | 163 | 366 |
| 2008 | 203 | 472 |
| 2009 | 245 | 376 |
| 2010 | 331 | 242 |
| 2011 | 314 | 296 |
| 2012 | 277 | 339 |
| 2013 | 322 | 310 |
| 2014 | 333 | 243 |
| 2015 | 290 | 295 |
| 2016 | 332 | 341 |
| 2017 | 362 | 360 |
| 2018 | 338 | 270 |
| 2019 | 297 | 304 |
| 2020 | 317 | 401 |
| 2021 | 306 | 372 |
| 2022 | 265 | 375 |
| 2023 | 267 | 468 |
| 2024 | 283 | 520 |
| 2025 | 367 | 544 |
| 2026 | 236 | 326 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method for forming semiconductor structure6 Oct 2026US 12,757,456 B2Taiwan Semiconductor Manufacturing Company.Ltd
- 3D-stacked semiconductor device including middle isolation structure and BSPDN structure6 Oct 2026US 12,757,485 B2Samsung Electronics Co., Ltd.
- Semiconductor device including interfacial layer with CET scaling and method for manufacturing the same29 Sep 2026US 12,751,047 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device with active layers doped by sacrificial layers and method thereof29 Sep 2026US 12,751,064 B2Samsung Electronics Co., Ltd.
- Source and drain regions for laterally adjacent gate-all-around (GAA) PMOS and NMOS29 Sep 2026US 12,751,074 B2Intel Corporation
- Physically unclonable function (puf) generation8 Oct 2026US 2026/0312831 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Multigate device and method of fabrication thereof8 Oct 2026US 2026/0313944 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Field effect transistor having segmented channel region8 Oct 2026US 2026/0313947 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Device having extended source/drain contact and method8 Oct 2026US 2026/0313963 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method thereof8 Oct 2026US 2026/0313970 A1National Tsing Hua University
Most cited
By later US patents
- FinFET devices with unique fin shape and the fabrication thereof1,337US 9,548,303 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Strained structure of semiconductor device and method of making the strained structure614US 9,171,929 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Integrated circuit and method for its manufacture597US 6,972,478 B1Advanced Micro Devices, Inc. · 2005
- Strained channel integrated circuit devices569US 8,729,627 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Semiconductor method and device with mixed orientation substrate566US 7,298,009 B2Infineon Technologies AG · 2007