H10D 8/021
Of breakdown diodes
Official title: {of breakdown diodes}
H10D8/021 (Of breakdown diodes) appears on 245 US grants and 279 published applications in this corpus.
Search patents in H10D- Granted patents
- 245
- Published applications
- 279
- Assignees
- 120
- Inventors
- 472
- Latest grant
- 21 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 2 | 0 |
| 1992 | 3 | 0 |
| 1993 | 2 | 0 |
| 1994 | 3 | 0 |
| 1995 | 2 | 0 |
| 1996 | 2 | 0 |
| 1997 | 4 | 0 |
| 1998 | 1 | 0 |
| 1999 | 2 | 0 |
| 2000 | 0 | 0 |
| 2001 | 2 | 0 |
| 2002 | 5 | 3 |
| 2003 | 3 | 3 |
| 2004 | 5 | 2 |
| 2005 | 2 | 5 |
| 2006 | 0 | 1 |
| 2007 | 2 | 5 |
| 2008 | 1 | 9 |
| 2009 | 7 | 4 |
| 2010 | 4 | 4 |
| 2011 | 1 | 3 |
| 2012 | 4 | 10 |
| 2013 | 9 | 18 |
| 2014 | 15 | 13 |
| 2015 | 15 | 18 |
| 2016 | 16 | 19 |
| 2017 | 23 | 26 |
| 2018 | 14 | 14 |
| 2019 | 23 | 16 |
| 2020 | 14 | 16 |
| 2021 | 12 | 18 |
| 2022 | 13 | 12 |
| 2023 | 8 | 13 |
| 2024 | 12 | 18 |
| 2025 | 9 | 17 |
| 2026 | 2 | 12 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Structure with buried doped region and methods to form same21 Apr 2026US 12,610,592 B2GLOBALFOUNDRIES U. S. Inc.
- Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device6 Jan 2026US 12,520,551 B2Fuji Electric Co., Ltd.
- Semiconductor device with improved mechanical stress resistance16 Dec 2025US 12,501,632 B2NXP B. V.
- Breakdown diodes and methods of making the same16 Dec 2025US 12,501,633 B2Texas Instruments Incorporated
- Semiconductor device including zener diode ring and manufacturing method of forming the same2 Dec 2025US 12,490,519 B2Panjit International Inc.
- Tvs diode having asymmetric breakdown voltage and method of formation24 Sep 2026US 2026/0293172 A1Littelfuse Semiconductor (Wuxi) Co., Ltd.
- Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device3 Sep 2026US 2026/0262279 A1Fuji Electric Co., Ltd.
- Strain insensitive zener diode20 Aug 2026US 2026/0247642 A1NXP B. V.
- Flip-chip diode structure and manafacturing method thereof21 May 2026US 2026/0143727 A1Taiwan-Asia Semiconductor Corporation
- Process for manufacturing a fast recovery inverse diode16 Apr 2026US 2026/0107521 A1Littelfuse, Inc.
Most cited
By later US patents
- Constant-voltage diode for over-voltage protection102US 5,430,311 AHitachi, Ltd. · 1995
- Method for making a mesa type PIN diode78US 5,268,310 AM/A-Com, Inc. · 1993
- Multilayer resist pattern forming method52US 5,632,910 ASony Corporation · 1997
- High-voltage lateral DMOS device51US 7,719,054 B2Advanced Analogic Technologies (Hong Kong) Limited · 2010
- Avalanche diode having an enhanced defect concentration level and method of making the same40US 9,257,523 B2Infineon Technologies AG · 2016