H10D 8/022
Of zener diodes
Official title: {of Zener diodes}
H10D8/022 (Of zener diodes) appears on 170 US grants and 194 published applications in this corpus.
Search patents in H10D- Granted patents
- 170
- Published applications
- 194
- Assignees
- 87
- Inventors
- 326
- Latest grant
- 16 Dec 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 2 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 2 | 0 |
| 1995 | 2 | 0 |
| 1996 | 2 | 0 |
| 1997 | 3 | 0 |
| 1998 | 1 | 0 |
| 1999 | 2 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 0 |
| 2002 | 3 | 3 |
| 2003 | 2 | 3 |
| 2004 | 5 | 2 |
| 2005 | 2 | 4 |
| 2006 | 0 | 1 |
| 2007 | 2 | 4 |
| 2008 | 0 | 8 |
| 2009 | 6 | 0 |
| 2010 | 4 | 4 |
| 2011 | 1 | 3 |
| 2012 | 2 | 6 |
| 2013 | 7 | 15 |
| 2014 | 9 | 6 |
| 2015 | 10 | 16 |
| 2016 | 12 | 14 |
| 2017 | 18 | 22 |
| 2018 | 10 | 10 |
| 2019 | 17 | 9 |
| 2020 | 9 | 12 |
| 2021 | 8 | 10 |
| 2022 | 8 | 5 |
| 2023 | 5 | 6 |
| 2024 | 4 | 11 |
| 2025 | 7 | 11 |
| 2026 | 0 | 9 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device with improved mechanical stress resistance16 Dec 2025US 12,501,632 B2NXP B. V.
- Breakdown diodes and methods of making the same16 Dec 2025US 12,501,633 B2Texas Instruments Incorporated
- Semiconductor device including zener diode ring and manufacturing method of forming the same2 Dec 2025US 12,490,519 B2Panjit International Inc.
- Semiconductor device and method for fabricating semiconductor device23 Sep 2025US 12,426,352 B2Fuji Electric Co., Ltd.
- Vertical deep trench and deep trench island based deep n-type well diode and diode triggered protection device15 Jul 2025US 12,363,926 B2Texas Instruments Incorporated
- Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device3 Sep 2026US 2026/0262279 A1Fuji Electric Co., Ltd.
- Strain insensitive zener diode20 Aug 2026US 2026/0247642 A1NXP B. V.
- Flip-chip diode structure and manafacturing method thereof21 May 2026US 2026/0143727 A1Taiwan-Asia Semiconductor Corporation
- Zener diode with improved stress immunity utilizing a poly mesh2 Apr 2026US 2026/0096114 A1NXP B. V.
- Semiconductor device and method of manufacturing the same26 Mar 2026US 2026/0090008 A1Renesas Electronics Corporation
Most cited
By later US patents
- Constant-voltage diode for over-voltage protection102US 5,430,311 AHitachi, Ltd. · 1995
- High-voltage lateral DMOS device51US 7,719,054 B2Advanced Analogic Technologies (Hong Kong) Limited · 2010
- High-voltage depletion mode MOSFET39US 7,605,428 B2Advanced Analogic Technologies, Inc. · 2009
- High-voltage lateral DMOS device with diode clamp37US 7,683,426 B2Advanced Analogic Technologies, Inc. · 2010
- High-voltage lateral DMOS device30US 7,489,007 B2Advanced Analogic Technologies, Inc. · 2009