Flip-chip diode structure and manafacturing method thereof
AssigneeTaiwan-Asia Semiconductor Corporation
InventorHou-Jun Wu
Life of this patent
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Abstract
A flip-chip diode structure is provided, which comprises: a substrate, two junction regions, two metal electrodes and a dielectric layer. The substrate includes two arc recesses, respectively disposed at opposite edges of the substrate. The two junction regions are disposed within the substrate. Two metal electrodes are disposed on the same side of the substrate and each electrically connected to one of the two junction regions. The dielectric layer covers the arc recesses and the top surface of the substrate between the two metal electrodes. Each of the arc recesses is adjacent to the outer side of one of the metal electrodes, and the maximum depth of the two junction regions within the substrate is less than the depth of the arc recesses.
Claims15
A flip-chip diode structure, comprising:
- a substrate, including two arc recesses, respectively disposed at opposite edges of the substrate;
- two junction regions, disposed within the substrate;
- two metal electrodes, disposed on the same side of the substrate and each electrically connected to one of the two junction regions;
- and
- a dielectric layer, covering the arc recesses and the top surface of the substrate between the two metal electrodes,
- wherein each of the arc recesses is adjacent to the outer side of one of the metal electrodes, and a maximum depth of the two junction regions within the substrate is less than a depth of the arc recesses.
A manufacturing method of a flip-chip diode structure, comprising:
- providing two junction regions, disposed within a substrate;
- removing a portion of the substrate to form two arc recesses, respectively disposed at opposite edges of the substrate;
- providing two metal electrodes, disposed on the same side of the substrate and each of the two metal electrodes electrically connected to one of the two junction regions;
- and
- providing a dielectric layer, covering the arc recesses and the top surface of the substrate between the two metal electrodes,
- wherein each of the arc recesses is adjacent to the outer side of one of the metal electrodes, and a maximum depth of the two junction regions within the substrate is less than a depth of the arc recesses.
Dependencies are inferred from the claim text.