Vertical deep trench and deep trench island based deep n-type well diode and diode triggered protection device

A method, comprising:

• forming a first trench and a second trench in a substrate, the second trench laterally spaced apart from the first trench, wherein:
• the first trench has a first footprint with a first area;
• and
• the second trench has a second footprint with a second area same as the first area;
• forming a first doped layer of a first conductivity type surrounding the first trench and a second doped layer of the first conductivity type surrounding the second trench, wherein the first doped layer overlaps with the second doped layer forming a first doped region between the first trench and the second trench, the first doped region having a doping concentration greater than doping concentrations of the first doped layer and the second doped layer;
• and
• forming a second doped region of a second conductivity type opposite the first conductivity type abutting the first doped region to form a junction at an interface between the first doped region and the second doped region.