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US 12,501,633 B2Granted
Breakdown diodes and methods of making the same
AssigneeTexas Instruments Incorporated
InventorsAlexei Sadovnikov, Natalia Lavrovskaya, Archana Venugopal
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Abstract
Breakdown diodes and methods of making the same are described. Such a breakdown diode can be fabricated in a semiconductor substrate and have a junction configured to breakdown under a target reverse bias applied across the junctions. The junction is located below the surface of the substrate by a distance suitable for ameliorating mechanical stress impact to the reverse bias breakdown voltage of the junction. Moreover, the junction is located away from an interface causing noise issues.
Claims28
A semiconductor device, comprising:
- a substrate with a surface;
- a first electrode on the surface, the first electrode coupled to a p-doped region of the substrate, wherein the p-doped region includes:
- a first portion coupled to the first electrode and has a first concentration of p-type dopants;
- a second portion coupled to the first portion and has a second concentration of the p-type dopants less than the first concentration;
- and
- a third portion coupled to the second portion and has a third concentration of the p-type dopants that is less than the first concentration and greater than the second concentration, the second portion extending to a greater depth within the substrate than the third portion;
- and
- a second electrode on the surface, the second electrode coupled to an n-doped region of the substrate, wherein the p-doped region and the n-doped region form a pn junction configured to breakdown under a target reverse bias across the pn junction, the third portion of the p-doped region being adjacent to the pn junction.
5 more elements
Dependencies are inferred from the claim text.