Back to results
US 12,610,592 B2Granted
Structure with buried doped region and methods to form same
AssigneeGlobalFoundries U.S. Inc.
InventorsSagar Premnath Karalkar, Jie Zeng, Souvick Mitra
Life of this patent
Estimating the term…
Abstract
The disclosure provides a structure with a buried doped region, and methods to form the same. A structure may include a semiconductor substrate including a first well. A first terminal includes a first doped region in the first well. A second terminal includes a second doped region in the first well. The first well horizontally separates the first doped region from the second doped region. A first buried doped region is in the first well. The first buried doped region overlaps with, and is underneath, the first doped region. The first well vertically separates the first doped region from the first buried doped region.
Claims19
A structure comprising:
- a semiconductor substrate including a first well;
- a buried doped layer below the first well;
- a first terminal including a first doped region in the first well, wherein the first well vertically separates the first terminal from the buried doped layer;
- a second terminal including a second doped region in the first well, wherein the first well horizontally separates the first doped region from the second doped region, and the first well vertically separates the first terminal from the buried doped layer;
- a first floating doped region within and wholly encapsulated by the first well such that the first floating doped region is overlapping with and underneath the first doped region, wherein the first floating doped region is vertically between the first doped region and the buried doped layer, the first well vertically separates the first floating doped region from the first doped region and the buried doped layer, and the first floating doped region is not coupled to or contacted by an electrical bias or ground;
- and
- a second floating doped region within and wholly encapsulated by the first well such that the second floating doped region is overlapping with and underneath the second doped region, wherein the second floating doped region is vertically between the second doped region and the buried doped layer, the first well vertically separates the second floating doped region from the second doped region and the buried doped layer, the second floating doped region is not coupled to or contacted by the first terminal or the second terminal to an electrical bias or ground.
4 more elements
A structure comprising:
- a semiconductor substrate including a first well;
- a buried doped layer below the first well;
- a first terminal including a first doped region in the first well, wherein the first well vertically separates the first terminal from the buried doped layer;
- a second terminal including a second doped region in the first well, wherein the first well horizontally separates the first doped region from the second doped region, and the first well vertically separates the first terminal from the buried doped layer;
- a first floating doped region within and wholly encapsulated by the first well such that the first floating doped region is overlapping with and underneath the first doped region, wherein the first well vertically separates the first floating doped region from the first doped region and the buried doped layer, and the first floating doped region is not coupled to or contacted by an electrical bias or ground;
- a second floating doped region within and wholly encapsulated by the first well such that the second floating doped region is overlapping with and underneath the second doped region, wherein the second floating doped region is vertically between the second doped region and the buried doped layer, and the first well vertically separates the second floating doped region from the second doped region and the buried doped layer, and the second floating doped region is not coupled to or contacted by the first terminal or the second terminal to an electrical bias or ground;
- and
- a second well within the first well and horizontally between the first doped region and the second doped region, wherein a dopant concentration within the second well is higher than a dopant concentration within the first well, and wherein the second well is floating.
5 more elements
A method comprising:
- forming a semiconductor substrate including a first well and a buried doped layer below the first well;
- forming a first terminal including a first doped region in the first well, wherein the first well vertically separates the first terminal from the buried doped layer;
- forming a second terminal including a second doped region in the first well, wherein the first well horizontally separates the first doped region from the second doped region, and the first well vertically separates the first terminal from the buried doped layer;
- forming a first floating doped region within and wholly encapsulated by the first well such that the first floating doped region is overlapping with and underneath the first doped region, wherein the first floating doped region is vertically between the first doped region and the buried doped layer, and the first well vertically separates the first floating doped region from the first doped region and the buried doped layer, and the first floating doped region is not coupled to or contacted by an electrical bias or ground;
- and
- forming a second floating doped region within and wholly encapsulated by the first well such that the second floating doped region is overlapping with and underneath the second doped region, wherein the second floating doped region is vertically between the second doped region and the buried doped layer, and the first well vertically separates the second floating doped region from the second doped region and the buried doped layer, and the second floating doped region is not coupled to or contacted by the first terminal or the second terminal to an electrical bias or ground.
3 more elements
Dependencies are inferred from the claim text.