H10D 64/118
Electrodes comprising insulating layers having particular dielectric or electrostatic properties
Official title: {Electrodes comprising insulating layers having particular dielectric or electrostatic properties, e.g. having static charges}
H10D64/118 (Electrodes comprising insulating layers having particular dielectric or electrostatic properties) appears on 800 US grants and 830 published applications in this corpus.
Search patents in H10D- Granted patents
- 800
- Published applications
- 830
- Assignees
- 232
- Inventors
- 1,489
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 3 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 2 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 2 | 0 |
| 1987 | 2 | 0 |
| 1988 | 2 | 0 |
| 1989 | 3 | 0 |
| 1990 | 1 | 0 |
| 1991 | 4 | 0 |
| 1992 | 1 | 0 |
| 1993 | 4 | 0 |
| 1994 | 7 | 0 |
| 1995 | 6 | 0 |
| 1996 | 4 | 0 |
| 1997 | 5 | 0 |
| 1998 | 6 | 0 |
| 1999 | 6 | 0 |
| 2000 | 4 | 0 |
| 2001 | 9 | 4 |
| 2002 | 10 | 11 |
| 2003 | 5 | 6 |
| 2004 | 7 | 5 |
| 2005 | 4 | 3 |
| 2006 | 3 | 6 |
| 2007 | 2 | 8 |
| 2008 | 5 | 9 |
| 2009 | 6 | 2 |
| 2010 | 4 | 16 |
| 2011 | 9 | 14 |
| 2012 | 12 | 15 |
| 2013 | 20 | 26 |
| 2014 | 36 | 51 |
| 2015 | 37 | 52 |
| 2016 | 47 | 64 |
| 2017 | 77 | 113 |
| 2018 | 93 | 76 |
| 2019 | 79 | 71 |
| 2020 | 61 | 56 |
| 2021 | 37 | 54 |
| 2022 | 48 | 47 |
| 2023 | 38 | 36 |
| 2024 | 35 | 42 |
| 2025 | 32 | 23 |
| 2026 | 18 | 20 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device and method of manufacturing semiconductor device29 Sep 2026US 12,751,067 B2Kabushiki Kaisha Toshiba
- High electron mobility transistor and method of forming the same15 Sep 2026US 12,740,123 B2United Microelectronics Corp.
- Method for manufacturing vibration power generation device and vibration device21 Jul 2026US 12,689,312 B2Seiko Epson Corporation
- Semiconductor device16 Jun 2026US 12,660,279 B2Kabushiki Kaisha Toshiba
- Gate trench power semiconductor devices having improved breakdown performance and methods of forming such devices26 May 2026US 12,641,853 B2Wolfspeed, Inc.
- Method of forming a sealed cavity embedded in a semiconductor wafer17 Sep 2026US 2026/0282502 A1Analog Devices, Inc.
- Multi-threshold voltage integration scheme for semiconductor devices27 Aug 2026US 2026/0255654 A1APPLIED Materials.Inc.
- Semiconductor device13 Aug 2026US 2026/0239707 A1Kabushiki Kaisha Toshiba
- Semiconductor device, method for manufacturing semiconductor device, inverter circuit, drive device, vehicle, and elevator13 Aug 2026US 2026/0239708 A1Kabushiki Kaisha Toshiba
- Semiconductor device6 Aug 2026US 2026/0231500 A1Kabushiki Kaisha Toshiba
Most cited
By later US patents
- Implementation of surface sensitive semiconductor devices201US 4,009,483 AMotorola, Inc. · 1977
- Trenched high breakdown voltage semiconductor device170US 6,040,600 AMitsubishi Denki Kabushiki Kaisha · 2000
- Self-aligned power MOSFET device with recessed gate and source168US 5,801,417 AAdvanced Power Technology, Inc. · 1998
- High density power device fabrication process154US 5,283,201 AAdvanced Power Technology, Inc. · 1994
- High voltage mosgated device with trenches to reduce on-resistance150US 6,452,230 B1International Rectifier Corporation · 2002