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US 2026/0239708 A1Published application
Semiconductor device, method for manufacturing semiconductor device, inverter circuit, drive device, vehicle, and elevator
AssigneeKabushiki Kaisha Toshiba
InventorTatsuo SHIMIZU
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Abstract
A semiconductor device according to an embodiment includes a silicon carbide layer, a silicon oxide layer having a peak frequency of a longitudinal wave optical mode of 1245 cm−1 or more at a position 0.5 nm away from the silicon carbide layer, and a region located between the silicon carbide layer and the silicon oxide layer and having a nitrogen concentration of 1×1021 cm−3 or more. The concentration distribution of nitrogen in the silicon carbide layer, the silicon oxide layer, and the region has a peak in the region.
Claims8
1-9. (canceled)
A method for manufacturing a semiconductor device, the method comprising:
- forming a silicon oxide film on a surface of a silicon carbide layer by a vapor phase growth method, the silicon oxide film having an atomic ratio of oxygen (O) to silicon (Si) less than 2;
- performing a first heat treatment at a temperature of 350° C. or less and a pressure of 5 MPa or more in an atmosphere containing nitrogen oxide after the forming the silicon oxide film;
- and
- performing a second heat treatment at a temperature of 900° C. or more in a non-oxidizing atmosphere after the performing the first heat treatment.
1 more element
Dependencies are inferred from the claim text.