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US 12,641,853 B2Granted
Gate trench power semiconductor devices having improved breakdown performance and methods of forming such devices
AssigneeWolfspeed, Inc.
InventorsMadankumar Sampath, Woongsun Kim, Naeem Islam, Sei-Hyung Ryu
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Abstract
A semiconductor device includes a semiconductor layer structure comprising a gate trench formed in an upper surface thereof, a gate finger in the gate trench, a supplemental dielectric layer on an upper surface of the gate finger and vertically overlaps the gate trench, and a gate connector on an upper surface of the supplemental dielectric layer and on an upper surface of the gate finger.
Claims21
A semiconductor device, comprising:
- a semiconductor layer structure comprising a gate trench formed in an upper surface thereof;
- a gate finger in the gate trench;
- a supplemental dielectric layer on an upper surface of the gate finger, the supplemental dielectric layer vertically overlapping the gate trench;
- a gate connector that includes a first portion that is on an upper surface of a portion of the supplemental dielectric layer that extends beyond a first end of the gate trench and a second portion that is on an upper surface of the gate finger, the gate connector comprising a semiconductor material;
- a metal gate bus, wherein the gate connector is positioned in between the semiconductor layer structure and the metal gate bus;
- an intermetal dielectric layer that is on an upper surface of the first portion of the gate connector;
- and
- a source contact on an upper surface of the intermetal dielectric layer.
5 more elements
A semiconductor device, comprising:
- a semiconductor layer structure comprising a gate trench therein that has a rounded upper corner;
- a gate finger in the gate trench;
- a gate dielectric layer in the gate trench between the semiconductor layer structure and the gate finger;
- a supplemental dielectric layer on an upper surface of the gate dielectric layer and on an upper surface of the gate finger, the supplemental dielectric layer extending above the gate trench and beyond a first end of the gate trench;
- and
- an intermetal dielectric layer that vertically overlaps the supplemental dielectric layer and the gate trench, the intermetal dielectric layer extending beyond the first end of the gate trench above the supplemental dielectric layer.
3 more elements
A semiconductor device, comprising:
- a semiconductor layer structure having a gate trench therein;
- a gate finger in the gate trench;
- a gate bus;
- a gate connector that electrically connects the gate finger to the gate bus;
- a supplemental dielectric layer interposed in between an end portion of the gate finger and the gate connector;
- an intermetal dielectric layer that vertically overlaps the supplemental dielectric layer;
- and
- a source contact,
- wherein the gate connector extends underneath the source contact,
- wherein the supplemental dielectric layer directly contacts a first portion of the gate finger and the intermetal dielectric layer directly contacts a second portion of the gate finger.
7 more elements
Dependencies are inferred from the claim text.