Semiconductor device and method of manufacturing semiconductor device

A semiconductor device comprising:

• a semiconductor layer having an element region where a semiconductor element is provided and a termination region surrounding the element region;
• a conductive film provided on the element region and the termination region, the conductive film having a bottom surface facing the semiconductor layer and a top surface that is opposite to the bottom surface;
• a first insulating film provided on the top surface of the conductive film on the termination region and on a portion of the element region adjacent to the termination region, the first insulating film being an inorganic insulating film;
• a second insulating film, which is in direct contact with the conductive film, provided on a top surface of the first insulating film on the termination region and on the portion of the element region and having a resistivity lower than a resistivity of the first insulating film and higher than a resistivity of the conductive film;
• and
• a third insulating film provided on the second insulating film and having a resistivity higher than the resistivity of the second insulating film.

A semiconductor device comprising:

• a semiconductor layer having an element region where a semiconductor element is provided and a termination region surrounding the element region;
• a conductive film provided on the element region and the termination region, the conductive film having a bottom surface facing the semiconductor layer and a top surface that is opposite to the bottom surface;
• a first insulating film provided on the top surface of the conductive film on the termination region and on a portion of the element region adjacent to the termination region;
• a second insulating film provided on a top surface of the first insulating film and having a resistivity lower than a resistivity of the first insulating film and higher than a resistivity of the conductive film;
• and
• a third insulating film provided on the second insulating film except for an edge of the second insulating film on a side closer to the element region, wherein
• a side wall of the second insulating film on the side closer to the element region is in contact with the conductive film, and
• the second insulating film is farther from the semiconductor layer than the first insulating film, and the third insulating film is farther from the semiconductor layer than the second insulating film.