High electron mobility transistor and method of forming the same
AssigneeUnited Microelectronics Corp.
InventorsTsung-Mu Yang, Yu-Ren Wang
Life of this patent
Estimating the term…
Abstract
A high electron mobility transistor (HEMT) includes a substrate, a P-type III-V composition layer, a gate electrode and a carbon containing layer. The P-type III-V composition layer is disposed on the substrate, and the gate electrode is disposed on the P-type III-V composition layer. The carbon containing layer is disposed under the P-type III-V composition layer and includes a sunken surface, so as to function like an out diffusion barrier for preventing from the dopant within the P-type III-V composition layer diffusing into the stacked layers underneath during the annealing process.
Claims19
A high electron mobility transistor (HEMT), comprising:
- a substrate;
- a channel layer disposed on the substrate;
- a barrier layer disposed on the channel layer;
- a P-type III-V composition layer disposed on the barrier layer;
- a gate electrode disposed on the P-type III-V composition layer;
- and
- a carbon containing layer disposed on the channel layer, between the P-type III-V composition layer and the barrier layer, wherein the carbon containing layer comprises a sunken surface, wherein the barrier layer comprises a recess with a sidewall vertically aligned with a sidewall of the gate electrode, and the sunken surface of the carbon containing layer is disposed on the recess and partially overlays the sidewall of the recess.
A method of forming a high electron mobility transistor, comprising:
- providing a substrate;
- forming a channel layer on the substrate;
- forming a barrier layer on the channel layer;
- forming a P-type III-V composition layer on the barrier layer;
- forming a gate electrode on the P-type III-V composition layer;
- and
- forming a carbon containing layer on the channel layer, between the P-type III-V composition layer and the barrier layer, wherein the carbon containing layer is formed after forming the P-type III-V composition layer, and the carbon containing layer comprises a sunken surface.
Dependencies are inferred from the claim text.