H10D 64/01366
The semiconductor being silicon carbide
Official title: {the semiconductor being silicon carbide}
H10D64/01366 (The semiconductor being silicon carbide) appears on 483 US grants and 594 published applications in this corpus.
Search patents in H10D- Granted patents
- 483
- Published applications
- 594
- Assignees
- 130
- Inventors
- 716
- Latest grant
- 4 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 2 | 0 |
| 1996 | 0 | 0 |
| 1997 | 3 | 0 |
| 1998 | 3 | 0 |
| 1999 | 1 | 0 |
| 2000 | 4 | 0 |
| 2001 | 4 | 2 |
| 2002 | 7 | 11 |
| 2003 | 6 | 5 |
| 2004 | 6 | 5 |
| 2005 | 6 | 8 |
| 2006 | 6 | 7 |
| 2007 | 4 | 7 |
| 2008 | 5 | 15 |
| 2009 | 2 | 9 |
| 2010 | 12 | 9 |
| 2011 | 5 | 8 |
| 2012 | 6 | 22 |
| 2013 | 11 | 40 |
| 2014 | 26 | 29 |
| 2015 | 32 | 47 |
| 2016 | 38 | 53 |
| 2017 | 44 | 36 |
| 2018 | 38 | 41 |
| 2019 | 48 | 50 |
| 2020 | 41 | 28 |
| 2021 | 21 | 24 |
| 2022 | 30 | 38 |
| 2023 | 17 | 28 |
| 2024 | 17 | 19 |
| 2025 | 26 | 26 |
| 2026 | 11 | 27 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Superjunction silicon carbide semiconductor device having trench gate structures formed on stacked layers of parallel pn junctions extending in different directions and method thereof4 Aug 2026US 12,701,753 B2Fuji Electric Co., Ltd.
- SiC MOSFET with reduced on-resistance4 Aug 2026US 12,701,761 B2Infineon Technologies AG
- Forming an electronic device, such as a JBS or MPS diode, based on 3C-SiC, and 3C-SiC electronic device9 Jun 2026US 12,652,812 B2STMicroelectronics S,r.l.
- Low-temperature processing method for improving 4H—SIC/SIO2 interface based on supercritical oxynitride and use thereof19 May 2026US 12,635,201 B2Xi' An Jiaotong University
- Semiconductor device, method for manufacturing semiconductor device, inverter circuit, drive device, vehicle, and elevator12 May 2026US 12,628,405 B2Kabushiki Kaisha Toshiba
- Sic device with vertical field plates and method of manufacturing the same1 Oct 2026US 2026/0304886 A1United Microelectronics Corp.
- Gate oxide stack for sic mosfet10 Sep 2026US 2026/0271371 A1Microchip Technology Incorporated
- Semiconductor device, method for manufacturing semiconductor device, inverter circuit, drive device, vehicle, and elevator13 Aug 2026US 2026/0239708 A1Kabushiki Kaisha Toshiba
- Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device30 Jul 2026US 2026/0223388 A1Fuji Electric Co., Ltd.
- Trench mosfet with bottom oxide thickness equal to or greater than sidewall oxide thickness23 Jul 2026US 2026/0214925 A1Microchip Technology Incorporated
Most cited
By later US patents
- Process for reducing defects in oxide layers on silicon carbide118US 5,972,801 ACree Research, Inc. · 1999
- Layered dielectric on silicon carbide semiconductor structures102US 6,246,076 B1Cree, Inc. · 2001
- Silicon carbide CMOS devices91US 6,344,663 B12002
- Method for making insulated-gate semiconductor element83US 6,228,720 B1Matsushita Electric Industrial Co., Ltd. · 2001
- Silicon carbide semiconductor device and method of manufacturing the same79US 6,165,822 ADenso Corporation · 2000