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US 2026/0223388 A1Published application
Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorTakeshi SUZUKI
Life of this patent
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Abstract
A semiconductor device, including: a semiconductor substrate containing silicon carbide; a gate insulating film containing silicon oxide, provided on a surface of the semiconductor substrate; and a gate electrode provided on a surface of the gate insulating film. The semiconductor device has a plurality of germanium atoms and a plurality of alkaline earth metal atoms at an interface between the gate insulating film and the semiconductor substrate.
Claims19
A semiconductor device comprising:
- a semiconductor substrate containing silicon carbide;
- a gate insulating film containing silicon oxide, provided on a surface of the semiconductor substrate;
- and
- a gate electrode provided on a surface of the gate insulating film, wherein
- the semiconductor device has a plurality of germanium atoms and a plurality of alkaline earth metal atoms at an interface between the gate insulating film and the semiconductor substrate.
2 more elements
A method of manufacturing a silicon carbide semiconductor device, the method comprising:
- as a predetermined process, preparing a semiconductor substrate containing silicon carbide and oxidizing a surface of the semiconductor substrate, a plurality of carbon atoms being deposited on the surface of the semiconductor substrate in the predetermined process;
- as a removing process, removing the plurality of carbon atoms;
- as a first forming process, depositing a gate insulating film containing silicon oxide on the surface of the semiconductor substrate from which the plurality of carbon atoms has been removed;
- and as a second forming process, forming a gate electrode on a surface of the gate insulating film, wherein the removing process includes:
- as a first removing process, performing a first irradiation to the surface of the semiconductor substrate with a first plurality of nitrogen atoms having unpaired electrons, thereby desorbing the plurality of carbon atoms from the surface of the semiconductor substrate, and as a second removing process, performing
- a first process of depositing a plurality of germanium atoms on the surface of the semiconductor substrate, and
- a second process of performing a second irradiation to the surface of the semiconductor substrate with a second plurality of nitrogen atoms having unpaired electrons, thereby desorbing remaining ones of the plurality of carbon atoms at the surface of the semiconductor substrate after the first removing process.
4 more elements
Dependencies are inferred from the claim text.