US 12,635,201 B2 · Low-temperature processing method for improving 4H—SIC/SIO2 interface based on supercritical oxynitride and use thereof

Abstract

Disclosed are a low-temperature processing method for improving a 4H—SiC/SiO2 interface based on a supercritical oxynitride, and use thereof. The method includes: performing standard cleaning on a silicon carbide sample to be processed; performing dry-oxygen oxidation on the cleaned silicon carbide sample to grow an oxide layer; placing the silicon carbide sample having the oxide layer on a support in a steady-state supercritical chamber; controlling a pressure and injecting nitrogen-oxygen gas into the supercritical device; increasing a temperature in the supercritical device from 23° C. to 500° C.; maintaining the above supercritical state until the processing ends; reducing a temperature of a reactor to room temperature after reaction ends, reducing the pressure to an atmospheric pressure, and taking out the reactor. The present disclosure allows for effective and quick decrease in the 4H—SiC/SiO2 interface state density, and also a significant decrease in the processing temperature.

Claims6

Dependent claims

A low-temperature processing method for improving a 4H—SiC/SiO2 interface based on a supercritical oxynitride, the method comprising:

step S1 of placing a silicon carbide sample with an oxide layer into a steady-state supercritical chamber;
step S2 of sealing the steady-state supercritical chamber and injecting nitrogen-oxygen gas into the steady-state supercritical chamber, and controlling an initial pressure;
step S3 of performing temperature- and pressure-increasing processing on the steady-state supercritical chamber;
and
step S4 of maintaining a temperature and a pressure at which the temperature- and pressure-increasing processing is performed in step S3 until reaction completes, reducing the pressure to an atmospheric pressure, and taking out the sample, to complete low-temperature processing,
wherein in step S2, a content of the nitrogen-oxygen gas is greater than or equal to 10% of a volume of a reactor of the steady-state supercritical chamber, and the initial pressure ranges from 5 MPa to 25 MPa.

3 more elements

Dependencies are inferred from the claim text.

Low-temperature processing method for improving 4H—SIC/SIO2 interface based on supercritical oxynitride and use thereof

Life of this patent

Low-temperature processing method for improving 4H—SIC/SIO2 interface based on supercritical oxynitride and use thereof

Life of this patent

Abstract

Claims6