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US 12,628,405 B2Granted
Semiconductor device, method for manufacturing semiconductor device, inverter circuit, drive device, vehicle, and elevator
AssigneeKabushiki Kaisha Toshiba
InventorTatsuo Shimizu
Life of this patent
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Abstract
A semiconductor device according to an embodiment includes a silicon carbide layer, a silicon oxide layer having a peak frequency of a longitudinal wave optical mode of 1245 cm−1 or more at a position 0.5 nm away from the silicon carbide layer, and a region located between the silicon carbide layer and the silicon oxide layer and having a nitrogen concentration of 1×1021 cm−3 or more. The concentration distribution of nitrogen in the silicon carbide layer, the silicon oxide layer, and the region has a peak in the region.
Claims12
A semiconductor device comprising:
- a silicon carbide layer;
- a silicon oxide layer having a peak frequency of a longitudinal wave optical mode of 1245 cm−1 or more at a position 0.5 nm away from the silicon carbide layer;
- and
- a region located between the silicon carbide layer and the silicon oxide layer and having a nitrogen concentration of 1×1021 cm−3 or more,
- wherein
- a concentration distribution of nitrogen in the silicon carbide layer, the silicon oxide layer, and the region has a peak in the region, and
- a concentration of nitrogen at a first position 1 nm away from the peak toward the silicon oxide layer is 1×1018 cm−3 or less, and a concentration of carbon at the first position is 1×1018 cm−3 or less.
4 more elements
A semiconductor device comprising:
- a silicon carbide layer;
- a silicon oxide layer having a peak frequency of a longitudinal wave optical mode of 1245 cm−1 or more at a position 0.5 nm away from the silicon carbide layer;
- and
- a region located between the silicon carbide layer and the silicon oxide layer and having a nitrogen concentration of 1×1021 cm−3 or more,
- wherein
- a concentration distribution of nitrogen in the silicon carbide layer, the silicon oxide layer, and the region has a peak in the region, and
- a concentration of nitrogen at a second position 1 nm away from the peak toward the silicon carbide layer is 1×1018 cm−3 or less.
4 more elements
Dependencies are inferred from the claim text.