H10D 64/0133
At least part of the entire electrode being a sidewall spacer, being
Official title: {at least part of the entire electrode being a sidewall spacer, being formed by transformation under a mask or being formed by plating at a sidewall}
H10D64/0133 (At least part of the entire electrode being a sidewall spacer, being) appears on 315 US grants and 236 published applications in this corpus.
Search patents in H10D- Granted patents
- 315
- Published applications
- 236
- Assignees
- 119
- Inventors
- 436
- Latest grant
- 28 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 4 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 4 | 0 |
| 1986 | 2 | 0 |
| 1987 | 3 | 0 |
| 1988 | 8 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 8 | 0 |
| 1992 | 7 | 0 |
| 1993 | 2 | 0 |
| 1994 | 1 | 0 |
| 1995 | 3 | 0 |
| 1996 | 2 | 0 |
| 1997 | 4 | 0 |
| 1998 | 5 | 0 |
| 1999 | 11 | 0 |
| 2000 | 8 | 0 |
| 2001 | 15 | 2 |
| 2002 | 12 | 10 |
| 2003 | 12 | 10 |
| 2004 | 10 | 13 |
| 2005 | 11 | 12 |
| 2006 | 6 | 15 |
| 2007 | 8 | 13 |
| 2008 | 6 | 8 |
| 2009 | 7 | 18 |
| 2010 | 15 | 18 |
| 2011 | 17 | 17 |
| 2012 | 14 | 6 |
| 2013 | 14 | 12 |
| 2014 | 19 | 25 |
| 2015 | 19 | 16 |
| 2016 | 12 | 12 |
| 2017 | 10 | 2 |
| 2018 | 6 | 7 |
| 2019 | 9 | 7 |
| 2020 | 5 | 7 |
| 2021 | 6 | 1 |
| 2022 | 2 | 2 |
| 2023 | 2 | 2 |
| 2024 | 1 | 0 |
| 2025 | 0 | 0 |
| 2026 | 2 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Semiconductor structure and manufacturing method thereof9 Nov 2023US 2023/0363139 A1Changxin Jidian (Beijing) Memory Technologies Co., Ltd.
- Semiconductor structure and method for forming same8 Jun 2023US 2023/0178645 A1Changxin Memory Technologies, Inc.
- Semiconductor device with embedded schottky diode and manufacturing method thereof29 Dec 2022US 2022/0416093 A1Alpha Power Solutions Limited
- Semiconductor Device with Embedded Schottky Diode And Manufacturing Method Thereof10 Feb 2022US 2022/0045223 A1Alpha Power Solutions Limited
Most cited
By later US patents
- Fabrication process of sub-micrometer channel length MOSFETs281US 4,419,809 AInternational Business Machines Corporation · 1983
- Process for forming gate conductors203US 6,391,753 B1Advanced Micro Devices, Inc. · 2002
- Material removal method for forming a structure171US 6,261,964 B1Micron Technology, Inc. · 2001
- Nonvolatile semiconductor memory device and manufacturing method thereof152US 5,041,886 ASamsung Electronics Co., Ltd. · 1991
- Multibit non-volatile memory and method129US 6,897,517 B2Infineon AG · 2005