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US 2023/0178645 A1Published application
Semiconductor structure and method for forming same
AssigneeChangxin Memory Technologies, Inc.
InventorXiang LIU
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Abstract
A method for forming a semiconductor structure includes the following operations. A substrate is formed. The substrate includes a body part and a protrusion part located on a surface of the body part. A gate electrode located on the body part and distributed around sidewalls of the protrusion part is formed. A first doped region and a second doped region located in the body part and distributed at two opposite sides of the gate electrode are formed.
Claims20
A method for forming a semiconductor structure, comprising:
- forming a substrate, wherein the substrate comprises a body part and a protrusion part located on a surface of the body part;
- forming a gate electrode located on the body part and distributed around sidewalls of the protrusion part;
- and
- forming a first doped region and a second doped region located in the body part and distributed at two opposite sides of the gate electrode.
1 more element
A semiconductor structure, comprising:
- a substrate comprising a body part and a protrusion part located on a surface of the body part;
- a gate electrode located on the body part and distributed around sidewalls of the protrusion part;
- a first doped region located in the body part;
- and
- a second doped region located in the body part,
- wherein the first doped region and the second doped region are distributed at two opposite sides of the gate electrode.
3 more elements
Dependencies are inferred from the claim text.