Semiconductor Device with Embedded Schottky Diode And Manufacturing Method Thereof
AssigneeAlpha Power Solutions Limited
InventorsWing Kit CHEUNG, Wai Tien CHAN, Wing Chong Tony CHAU, Ho Nam LEE, Qian SUN
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Abstract
One embodiment provides a semiconductor device. The device comprises a substrate having a first face and a second face, a well region, a source region disposed in the well region, a contact region contacting the well region and the source region, a Schottky region, and a source metal layer. A first part of the source metal layer contacts the Schottky region to form a Schottky diode. The Schottky region is surrounded by the contact region and the well region in a first plane perpendicular to a direction from the first face toward the second face.
Claims20
A semiconductor device comprising:
- a substrate of a first conductivity type and having a first face and a second face;
- a well region of a second conductivity type being opposite to the first conductivity type, the well region being disposed in the substrate and extending from the first face toward the second face;
- a source region of the first conductivity type, the source region being disposed in the well region and extending from the first face toward the second face;
- a contact region of the second conductivity type, the contact region being disposed in the substrate and extending from the first face toward the second face, the contact region contacting the well region and the source region;
- a Schottky region extending from the first face toward the second face, the Schottky region being a part of the substrate;
- and
- a source metal layer disposed on the first face, a first portion of the source metal layer contacting the Schottky region to form a Schottky diode, the Schottky region being surrounded by the well region and the contact region in a first plane perpendicular to a direction from the first face toward the second face.
A semiconductor device comprising:
- a substrate of a first conductivity type and having a first face and a second face;
- a plurality of well regions of a second conductivity type disposed in the substrate, the second conductivity type being opposite to the first conductivity type;
- a plurality of source regions, each source region being disposed in a corresponding well region;
- a plurality of contact regions of the second conductivity type, each contact region contacting adjacent well regions and source regions, the contact regions having a higher impurity concentration than the well regions;
- and
- a plurality of Schottky regions, each Schottky region being surrounded by a well region and a contact region in a first plane perpendicular to a direction from the first face to the second face.
A method of manufacturing a semiconductor device, comprising:
- providing a substrate of a first conductivity type, the substrate having a first face and a second face;
- forming a well region of a second conductivity type in the substrate;
- forming a source region of the first conductivity type in the well region;
- forming a Schottky region of the first conductivity type and a contact region of the second conductivity type in the substrate simultaneously such that the contact region contacts the well region and the source region, and such that in a first plane perpendicular to a direction from the first face to the second face, the Schottky region is surrounded by the well region and the contact region;
- and
- forming a source metal layer on the first face such that the source metal layer forms a Schottky diode with the Schottky region, and forms ohmic contact with the source region and the contact region.
Dependencies are inferred from the claim text.