H10D 62/605
Planar doped
Official title: {Planar doped, e.g. atomic-plane doped or delta-doped}
H10D62/605 (Planar doped) appears on 244 US grants and 217 published applications in this corpus.
Search patents in H10D- Granted patents
- 244
- Published applications
- 217
- Assignees
- 129
- Inventors
- 465
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 5 | 0 |
| 1988 | 2 | 0 |
| 1989 | 8 | 0 |
| 1990 | 4 | 0 |
| 1991 | 3 | 0 |
| 1992 | 1 | 0 |
| 1993 | 3 | 0 |
| 1994 | 9 | 0 |
| 1995 | 3 | 0 |
| 1996 | 2 | 0 |
| 1997 | 2 | 0 |
| 1998 | 3 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 2 | 0 |
| 2002 | 2 | 6 |
| 2003 | 5 | 9 |
| 2004 | 6 | 3 |
| 2005 | 4 | 3 |
| 2006 | 4 | 3 |
| 2007 | 1 | 1 |
| 2008 | 2 | 7 |
| 2009 | 4 | 5 |
| 2010 | 8 | 4 |
| 2011 | 5 | 7 |
| 2012 | 3 | 3 |
| 2013 | 6 | 16 |
| 2014 | 9 | 15 |
| 2015 | 21 | 27 |
| 2016 | 28 | 22 |
| 2017 | 15 | 18 |
| 2018 | 13 | 14 |
| 2019 | 18 | 13 |
| 2020 | 13 | 12 |
| 2021 | 7 | 3 |
| 2022 | 5 | 2 |
| 2023 | 3 | 5 |
| 2024 | 4 | 5 |
| 2025 | 3 | 11 |
| 2026 | 4 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device and method for manufacturing the same15 Sep 2026US 12,740,354 B2Fuji Electric Co., Ltd.
- Semiconductor structure and manufacturing method thereof21 Jul 2026US 12,690,221 B2Enkris Semiconductor, Inc.
- Method for producing nitride crystal and nitride crystal2 Jun 2026US 12,644,201 B2Mitsubishi Chemical Corporation
- Diamond-capped gallium oxide transistor26 May 2026US 12,642,016 B2The Government of the United States of America, as represented by the Secretary of the Navy
- Semiconductor device21 Oct 2025US 12,453,109 B2Silanna UV Technologies Pte Ltd
- Semiconductor device4 Jun 2026US 2026/0156859 A1Nippon Telegraph and Telephone Corporation
- Field effect transistor28 May 2026US 2026/0150325 A1NTT, Inc.
- Semiconductor structure8 Jan 2026US 2026/0013190 A1Enkris Semiconductor, Inc.
- Silicon carbide semiconductor wafer, manufacturing method of silicon carbide semiconductor wafer, and silicon carbide semiconductor device16 Oct 2025US 2025/0324698 A1Denso Corporation
- Semiconductor device11 Sep 2025US 2025/0287622 A1Silanna UV Technologies Pte Ltd
Most cited
By later US patents
- High electron mobility transistor213US 5,796,127 AMitsubishi Denki Kabushiki Kaisha · 1998
- Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same189US 7,919,791 B2Cree, Inc. · 2011
- Method for forming transistor of semiconductor device132US 6,667,200 B2Hynix Semiconductor Inc. · 2003
- Process for producing a doped semiconductor substrate130US 7,078,325 B2Infineon Technologies AG · 2006
- Method for fabricating semiconductor device with ultra-shallow super-steep-retrograde epi-channel by decaborane doping126US 6,753,230 B2Hynix Semiconductor Inc. · 2004