US 6,667,200 B2Granted

Method for forming transistor of semiconductor device

AssigneeHynix Semiconductor Inc.

InventorsYong Sun Sohn, Chang Woo Ryoo, Jeong Youb Lee

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Abstract

A method for forming a transistor of a semiconductor device, including the step of forming channel layers of a first and a second conductive types, performing high temperature thermal process to form stabilized channel layers and forming an epitaxial channel structure having a super-steep-retrograde δ-doped layer by growing undoped silicon epitaxial layers, treating the entire surface of the resulting structure with hydrogen, forming an epitaxial channel structure by growing undoped silicon epitaxial layers on the stabilized channel layers, forming gate insulating films and gate electrodes on the epitaxial channel structures, re-oxidizing the gate insulating films for repairing damaged portions of the gate insulating films; and forming a source/drain region and performing a low temperature thermal process.

Claims21

Dependent claims

A method for forming a transistor of a semiconductor device, the method comprising the steps of:

(a) defining a first and a second regions on a semiconductor substrate using a device isolation film pattern;
(b) ion-implanting a first conductive type impurity into the first region to form a first channel layer;
(c) ion-implanting a second conductive type impurity into the second region, using an exposure mask to form a second channel layer;
(d) performing a high temperature thermal process to convert the first and second channel layers into first and second stabilized channel layers, respectively;
(e) performing a hydrogen treatment process on the structure resulting from step (d);
(f) growing undoped silicon epitaxial layers on the first and the second stabilized channel layers thereby generating a first and a second δ-doped epitaxial channels of a super-steep-retrograde structure;
(g) forming a gate insulating film and a gate electrode on the first and the second δ-doped epitaxial channels, respectively;
(h) re-oxidizing the gate insulating film to repair damaged portions of the gate insulating film;
and
(i) forming a source/drain region and performing a low temperature thermal process.

7 more elements

Dependencies are inferred from the claim text.

Facts

Application: 10/331,265Filed 30 Dec 2002
Priority: KR 2002-2790520 May 2002
Published: US 2003/0215992 A120 Nov 2003
Granted: 23 Dec 2003
Term ends: Not estimatedThe source records don’t support an estimate.

Classification8 codes

H10D 64/0134
On single crystalline silicon, e.g. chemical oxidation using a liquid: with a treatment, e.g. annealing, after the formation of the insulator and…
H10D 30/0278
Of lateral single-gate IGFETs: forming single crystalline channels on wafers after forming insulating device isolations
H10D 62/314
Of igfets: having vertical doping variations
H10D 62/605
Impurity distributions or concentrations: planar doped, e.g. atomic-plane doped or delta-doped