Field effect transistor

A field effect transistor, comprising:

• a gate electrode composed of a plurality of electrode wires, at least two of the plurality of electrode wires intersecting with each other;
• a feed terminal connected to one end of at least one of the plurality of electrode wires;
• and
• a plurality of source electrodes and a plurality of drain electrodes arranged in respective regions defined at least in part by the plurality of electrode wires.

A high electron mobility transistor (HEMT), comprising:

• a semiconductor substrate;
• a buffer layer on the semiconductor substrate;
• a channel layer on the buffer layer;
• a barrier layer on the channel layer;
• a plurality of source electrodes and a plurality of drain electrodes arranged alternately in a planar array on the barrier layer;
• a gate electrode structure comprising a plurality of intersecting wires, the intersecting wires separating the plurality of source electrodes and the plurality of drain electrodes;
• and
• a feed terminal connected to the gate electrode structure.

A high-frequency amplifier circuit, comprising:

• at least one field effect transistor, the field effect transistor including:
• a plurality of source electrodes and a plurality of drain electrodes in a planar arrangement;
• a gate electrode comprising intersecting wires forming enclosed regions, wherein each of the enclosed regions contains one of the plurality of source electrodes or one of the plurality of drain electrodes;
• a feed terminal connected to the gate electrode;
• an input matching network connected to the gate electrode;
• and
• an output matching network connected to the plurality of drain electrodes.