H10D 62/60
Impurity distributions or concentrations
H10D62/60 (Impurity distributions or concentrations) appears on 2,574 US grants and 3,207 published applications in this corpus.
Search patents in H10D- Granted patents
- 2,574
- Published applications
- 3,207
- Assignees
- 602
- Inventors
- 4,487
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 5 | 0 |
| 1978 | 3 | 0 |
| 1979 | 4 | 0 |
| 1980 | 1 | 0 |
| 1981 | 4 | 0 |
| 1982 | 1 | 0 |
| 1983 | 4 | 0 |
| 1984 | 3 | 0 |
| 1985 | 3 | 0 |
| 1986 | 2 | 0 |
| 1987 | 10 | 0 |
| 1988 | 4 | 0 |
| 1989 | 18 | 0 |
| 1990 | 17 | 0 |
| 1991 | 20 | 0 |
| 1992 | 8 | 0 |
| 1993 | 9 | 0 |
| 1994 | 10 | 0 |
| 1995 | 8 | 0 |
| 1996 | 5 | 0 |
| 1997 | 3 | 0 |
| 1998 | 10 | 0 |
| 1999 | 2 | 0 |
| 2000 | 6 | 0 |
| 2001 | 11 | 4 |
| 2002 | 8 | 16 |
| 2003 | 10 | 19 |
| 2004 | 13 | 16 |
| 2005 | 10 | 16 |
| 2006 | 15 | 18 |
| 2007 | 8 | 21 |
| 2008 | 8 | 32 |
| 2009 | 16 | 22 |
| 2010 | 28 | 30 |
| 2011 | 23 | 40 |
| 2012 | 27 | 49 |
| 2013 | 45 | 113 |
| 2014 | 91 | 164 |
| 2015 | 180 | 277 |
| 2016 | 230 | 266 |
| 2017 | 252 | 251 |
| 2018 | 230 | 259 |
| 2019 | 239 | 273 |
| 2020 | 265 | 218 |
| 2021 | 169 | 172 |
| 2022 | 141 | 145 |
| 2023 | 115 | 152 |
| 2024 | 102 | 138 |
| 2025 | 101 | 203 |
| 2026 | 76 | 293 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device and manufacturing method6 Oct 2026US 12,757,452 B2Hitachi Energy Ltd
- Nitride semiconductor and semiconductor device6 Oct 2026US 12,757,462 B2Kabushiki Kaisha Toshiba
- Semiconductor device with metal silicide layer and method for manufacturing the same29 Sep 2026US 12,751,059 B2Kabushiki Kaisha Toshiba
- Doped well for semiconductor devices29 Sep 2026US 12,751,078 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device with voltage resistant structure22 Sep 2026US 12,745,431 B2Rohm Co., Ltd.
- Systems and methods for fabrication of a part with an embedded quantum sensor8 Oct 2026US 2026/0309812 A1Toyota Jidosha Kabushiki Kaisha
- Semiconductor structure and method of manufacturing the same8 Oct 2026US 2026/0313878 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Planar mosfet having asymmetric wells8 Oct 2026US 2026/0313954 A1Microchip Technology Incorporated
- Mosfet device8 Oct 2026US 2026/0314037 A1Vishay-Siliconix
- Finfet device having flat-top epitaxial features and method of making the same8 Oct 2026US 2026/0314059 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- In-situ doping of arsenic for source and drain epitaxy548US 8,962,400 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Carrier channel with element concentration gradient distribution and fabrication method thereof520US 9,196,483 B1National Tsing Hua University · 2015
- Source/drain performance through conformal solid state doping469US 10,032,628 B2ASM IP Holding B. V. · 2018
- Doped semiconductor films and processing419US 9,099,423 B2ASM IP Holding B. V. · 2015
- Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same284US 6,831,292 B2AmberWave Systems Corporation · 2004