Doped semiconductor films and processing
AssigneeASM IP Holding B.V.
InventorsKeith Doran Weeks, John Tolle, Matthew G. Goodman, Sandeep Mehta
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Abstract
A method of forming a semiconductor material incorporating an electrical dopant is disclosed. In one aspect, a method of incorporating dopant in a semiconductor film comprises forming a first semiconductor material incorporating the dopant at a first dopant concentration and preferentially etching a portion of the first semiconductor material, wherein etching leaves a first etched semiconductor material incorporating the dopant at a second dopant concentration higher than the first dopant concentration.
Claims28
A method of incorporating an electrical dopant in a semiconductor film through cyclical deposition and etch, the method comprising:
- forming the semiconductor film incorporating the dopant atoms among semiconductor atoms, wherein the dopant atoms are incorporated at a first dopant concentration;
- and
- etching a portion of the semiconductor film, wherein etching preferentially removes semiconductor atoms relative to the dopant atoms such that etching leaves a remaining portion of the semiconductor film having a second dopant concentration higher than the first dopant concentration.
A method of incorporating an electrical dopant in a semiconductor film through cyclical deposition and etch, the method comprising:
- forming a first semiconductor material incorporating the dopant at a first dopant concentration;
- preferentially etching a portion of the first semiconductor material, wherein preferentially etching leaves a first etched semiconductor material incorporating the dopant at a second dopant concentration higher than the first dopant concentration;
- forming a second semiconductor material on the first etched semiconductor material, the second semiconductor material incorporating the dopant at a third dopant concentration;
- and
- preferentially etching a portion of the second semiconductor material to leave a second etched semiconductor material incorporating the dopant at a fourth dopant concentration higher than the third dopant concentration.
A method of forming a doped semiconductor, comprising:
- depositing a semiconductor layer incorporating an electrical dopant;
- and
- subsequently increasing a concentration of the dopant without adding electrical dopant.
A semiconductor device comprising:
- a substrate;
- and
- an as-deposited epitaxial semiconductor layer on the substrate, wherein the as-deposited epitaxial layer has a uniform dopant concentration exceeding about 15 atomic %.
Dependencies are inferred from the claim text.