Process for producing a doped semiconductor substrate
AssigneeInfineon Technologies AG
InventorsGiuseppe Curello, Jürgen Faul
Life of this patent
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Abstract
A process is described which allows a buried, retrograde doping profile or a delta doping to be produced in a relatively simple and inexpensive way. The process uses individual process steps that are already used in the mass production of integrated circuits and accordingly can be configured for a high throughput.
Claims17
A process for producing a doping for a MOS transistor, which comprises the following steps:
- providing a semiconductor substrate;
- producing a doping at a surface of the semiconductor substrate;
- after producing the doping, applying a layer selected from the group consisting of a polycrystalline layer and an amorphous layer to the surface;
- performing a rapid thermal annealing process;
- and
- subsequently carrying out a heat treatment step for producing an epitaxial layer and a buried doping for a MOS transistor.
A process for producing a doping for a MOS transistor, which comprises the following steps:
- providing a semiconductor substrate;
- producing the doping, depositing a poly/α layer using a low-pressure and low-temperature chemical vapor deposition process to the surface of the semiconductor substrate;
- and
- carrying out a heat treatment step for producing an eptiaxial layer and a buried doping for a MOS transistor.
A process for producing a doping for a MOS transistor, which comprises the following steps:
- providing a semiconductor substrate;
- producing a doping at a surface of the semiconductor substrate;
- after producing the doping, depositing a poly/α layer to a thickness between 20 nm to 40 nm using a low-pressure chemical vapor deposition process to the surface of the semiconductor substrate;
- and
- carrying out a heat treatment step for producing an epitaxial layer and a buried doping for a MOS transistor.
A process for producing a MOS transistor with a buried doping, which comprises the following steps:
- providing a semiconductor substrate;
- producing a doping at a surface of the semiconductor substrate;
- after producing the doping, applying a layer selected from the group consisting of a polycrystalline layer and an amorphous layer to the surface;
- subjecting the assembly to ion bombardment or to RTA processing with a rapid heat treatment to thereby destroy an oxide layer present between the semiconductor substrate and the polycrystallinge or amorphous layer;
- and
- subjecting the assembly to a heat treatment step for producing a monocrystalline layer and a buried doping from the layers and the semiconductor substrate for forming the MOS transistor.
Dependencies are inferred from the claim text.