Semiconductor device

A semiconductor device comprising:

• a field-effect transistor comprising:
• a first barrier layer comprising a first compound semiconductor;
• a channel layer comprising a second compound semiconductor disposed on an upper surface of the first barrier layer;
• a second barrier layer comprising a third compound semiconductor disposed on an upper surface of the channel layer;
• a gate electrode disposed above an upper surface the second barrier layer;
• a source electrode and a drain electrode disposed with the gate electrode disposed therebetween, wherein the source electrode or the drain electrode is disposed below a lower surface of the first barrier layer;
• a first carrier supply layer disposed below the lower surface of the first barrier layer;
• a second carrier supply layer disposed on the upper surface of the second barrier layer between the gate electrode and the channel layer;
• and
• a groove penetrating the first barrier layer in a region where the gate electrode is disposed.

A method of manufacturing a semiconductor device comprising a field-effect transistor, the method comprising:

• forming a channel layer comprising a first compound semiconductor;
• forming a first barrier layer comprising a second compound semiconductor on a lower surface of the channel layer;
• forming a second barrier layer comprising a third compound semiconductor on an upper surface of the channel layer;
• forming a gate electrode above the upper surface of the channel layer;
• forming a source electrode and a drain electrode with the gate electrode disposed therebetween, wherein the source electrode or the drain electrode is formed below the lower surface of the channel layer;
• forming a first carrier supply layer below the lower surface of the channel layer;
• forming a second carrier supply layer above the upper surface of the channel layer between the gate electrode and the channel layer;
• and
• forming a groove penetrating the first barrier layer in a region underlying the gate electrode.