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AssigneeMitsubishi Chemical Corporation
InventorsYutaka Mikawa, Hideo Fujisawa, Kazunori Kamada, Hirobumi Nagaoka, Shinichiro Kawabata, Yuji Kagamitani
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A high-quality nitride crystal can be produced efficiently by charging a nitride crystal starting material that contains tertiary particles having a maximum diameter of from 1 to 120 mm and formed through aggregation of secondary particles having a maximum diameter of from 100 to 1000 μm, in the starting material charging region of a reactor, followed by crystal growth in the presence of a solvent in a supercritical state and/or a subcritical state in the reactor, wherein the nitride crystal starting material is charged in the starting material charging region in a bulk density of from 0.7 to 4.5 g/cm3 for the intended crystal growth.
A GaN crystal, comprising a fluorine element and at least one halogen element selected from the group consisting of a chlorine, bromine and iodine, wherein an oxygen concentration is from 4.8×1018 to 2.5×1019 atoms/cm3, and a Si concentration is 2×1015 atoms/cm3 or less.
A method of producing a GaN crystal, comprising:
Dependencies are inferred from the claim text.