H10D 62/328
Having pn junction gates
Official title: {having PN junction gates}
H10D62/328 (Having pn junction gates) appears on 172 US grants and 192 published applications in this corpus.
Search patents in H10D- Granted patents
- 172
- Published applications
- 192
- Assignees
- 99
- Inventors
- 365
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 3 | 0 |
| 1980 | 3 | 0 |
| 1981 | 2 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 2 | 0 |
| 1985 | 0 | 0 |
| 1986 | 2 | 0 |
| 1987 | 3 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 3 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 5 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 1 |
| 2002 | 1 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 2 | 5 |
| 2006 | 2 | 1 |
| 2007 | 1 | 3 |
| 2008 | 2 | 4 |
| 2009 | 1 | 5 |
| 2010 | 6 | 10 |
| 2011 | 6 | 6 |
| 2012 | 5 | 2 |
| 2013 | 4 | 4 |
| 2014 | 4 | 5 |
| 2015 | 7 | 19 |
| 2016 | 10 | 12 |
| 2017 | 18 | 17 |
| 2018 | 18 | 14 |
| 2019 | 10 | 10 |
| 2020 | 4 | 9 |
| 2021 | 7 | 9 |
| 2022 | 6 | 8 |
| 2023 | 9 | 16 |
| 2024 | 6 | 11 |
| 2025 | 5 | 9 |
| 2026 | 8 | 12 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Junction field effect transistor device and method of manufacturing the same15 Sep 2026US 12,740,116 B2Richtek Technology Corporation
- Semiconductor device with integrated junction field effect transistor and associated manufacturing method16 Jun 2026US 12,660,300 B2Monolithic Power Systems, Inc.
- GaN power device19 May 2026US 12,635,166 B2Lx Semicon Co., Ltd.
- Semiconductor device and manufacturing method thereof7 Apr 2026US 12,598,770 B2Hon Hai Precision Industry Co., Ltd.
- Vertical fin-based field effect transistor (FinFET) with connected fin tips7 Apr 2026US 12,598,805 B2Semiconductor Components Industries, LLC
- Vertical fin-based field effect transistor (finfet) with varying conductivity regions25 Jun 2026US 2026/0182011 A1Semiconductor Components Industries, LLC
- Nitride semiconductor device18 Jun 2026US 2026/0173432 A1Panasonic Holdings Corporation
- Method for producing a vertical jfet18 Jun 2026US 2026/0173783 A1
- Lateral power semiconductor device having a vertical channel and methods for making the same11 Jun 2026US 2026/0164726 A1Microchip Technology Incorporated
- Trench field-effect transistor (fet)14 May 2026US 2026/0136608 A1Semiconductor Components Industries, LLC
Most cited
By later US patents
- Si/SiGe vertical junction field effect transistor123US 5,714,777 AInternational Business Machines Corporation · 1998
- Semiconductor devices controlled by depletion regions88US 4,698,653 A1987
- Short channel junction field effect transistor85US 4,959,697 AVTC Inc. · 1990
- Vertical field effect transistor with improved gate and channel structure52US 4,262,296 AGeneral Electric Company · 1981
- Wide bandgap semiconductor device including lightly doped active region45US 5,536,953 AKobe Steel USA, Inc. · 1996