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US 2026/0164726 A1Published application
Lateral power semiconductor device having a vertical channel and methods for making the same
AssigneeMicrochip Technology Incorporated
InventorsShesh Mani Pandey, Yogesh Kumar Sharma
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Abstract
A lateral junction field-effect transistor including a volume of semiconductor material including a first end, a second end spaced vertically from the first end, a first side, and a second side spaced laterally from the first side. A source and a drain are located at the first end of the volume of semiconductor material. Laterally spaced apart first and second gates are also located at the first end of the volume of semiconductor material. The source is positioned between the first and second gates.
Claims19
A lateral junction field-effect transistor comprising:
- a volume of semiconductor material including a first end, a second end spaced vertically from the first end, a first side, and a second side spaced laterally from the first side;
- a source located at the first end of the volume of semiconductor material;
- a drain located at the first end of the volume of semiconductor material;
- and
- laterally spaced apart first and second gates located at the first end of the volume of semiconductor material, with the source being positioned between the first and second gates.
2 more elements
Dependencies are inferred from the claim text.