GaN power device
AssigneeLx Semicon Co., Ltd.
InventorJang Hyun Yoon
Life of this patent
Estimating the term…
Abstract
The present disclosure discloses a GaN power device having a structure improved to have an improved current density. The GaN power device includes a GaN layer, a first electrode and a second electrode formed on the GaN layer in a way to have a separation area therebetween, an AlGaN layer formed on the GaN layer of the separation area, a gate electrode formed over the AlGaN layer in a way to be separated from the first electrode and the second electrode, and a 2DEG layer formed at an interface of the AlGaN layer and the GaN layer in an area between the gate electrode and the second electrode.
Claims8
A gallium nitride (GaN) power device comprising:
- a GaN layer of a n-type conductivity type;
- a source electrode and a drain electrode on the GaN layer in a way to have a separation area therebetween;
- an AlGaN layer on the GaN layer of the separation area;
- a gate electrode separated from the source electrode and the drain electrode over the AlGaN layer;
- a cap layer of a p-type conductivity type disposed between the AlGaN layer and the gate electrode;
- and
- a 2DEG layer at an interface of the AlGaN layer and the GaN layer in an area between the cap layer and the drain electrode,
- wherein at least one concave surface is in the GaN layer under the 2DEG layer,
- the interface and the 2DEG layer are formed along the concave surface, and
- wherein a first spaced distance between the cap layer and the drain electrode is greater than a second spaced distance between the gate electrode and the drain electrode.
Dependencies are inferred from the claim text.