Method for producing a vertical jfet
OwnerDan Horia Popescu, Björn Fischer +2inventors
InventorsDan Horia Popescu, Björn Fischer, David Kammerlander, Hans Weber
Life of this patent
Estimating the term…
Abstract
Disclosed is a method. The method includes: forming a plurality of trenches in a first surface of a semiconductor body such that the trenches are separated from each other by semiconductor mesa regions; and forming a channel region of a first doping type in each of the mesa regions. Forming the channel region includes implanting first type dopant atoms at least into a first sidewall of the respective mesa region. Implanting the first type dopant atoms into the first sidewall includes at least two implantation processes that are different from each other with regard to at least one process parameter.
Claims15
A method, comprising:
- forming a plurality of trenches in a first surface of a semiconductor body such that the trenches are separated from each other by semiconductor mesa regions;
- and
- forming a channel region of a first doping type in each of the mesa regions,
- wherein forming the channel region comprises implanting first type dopant atoms at least into a first sidewall of the respective mesa region,
- wherein implanting the first type dopant atoms into the first sidewall comprises at least two implantation processes that are different from each other with regard to at least one process parameter.
Dependencies are inferred from the claim text.